Abstract: A packaged semiconductor device includes a first bond pad, a second bond pad, a first bond wire that includes a first end bonded to the first bond pad and a second end bonded to the second bond pad, and a second bond wire that includes a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad. The first end of the second bond wire is bonded to the first end of the first bond wire. A method of bonding a bond wire includes bonding a first end of a first bond wire to a contact surface of a first bond pad and bonding a first end of a second bond wire to a surface of the first end of the first bond wire.

Abstract: A packaged semiconductor device includes a first bond pad, a second bond pad, a first bond wire that includes a first end bonded to the first bond pad and a second end bonded to the second bond pad, and a second bond wire that includes a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad. The first end of the second bond wire is bonded to the first end of the first bond wire. A method of bonding a bond wire includes bonding a first end of a first bond wire to a contact surface of a first bond pad and bonding a first end of a second bond wire to a surface of the first end of the first bond wire.

Abstract: A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or ribbons connecting the first terminal to an output of the RF semiconductor die, and gold bonding wires or ribbons connecting the capacitor to the output of the RF semiconductor die. The gold bonding wires or ribbons are designed to accommodate greater RF Joule heating during operation of the RF semiconductor die than the copper or aluminum bonding wires or ribbons. Corresponding methods of manufacturing are also described.

Abstract: A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or ribbons connecting the first terminal to an output of the RF semiconductor die, and gold bonding wires or ribbons connecting the capacitor to the output of the RF semiconductor die. The gold bonding wires or ribbons are designed to accommodate greater RF Joule heating during operation of the RF semiconductor die than the copper or aluminum bonding wires or ribbons. Corresponding methods of manufacturing are also described.

Abstract: A semiconductor package with wedge bonded chip. One embodiment provides a semiconductor chip, a wire bond and a metal element. The chip includes a bond pad with a copper layer. The wire bond is wedge bonded to the bond pad and ball bonded to the metal element.