Patents by Inventor Erwin Schoer

Erwin Schoer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device and method for thermally treating semiconductor wafers
    Patent number: 7151060
    Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: December 19, 2006
    Assignee: Mattson Thermal Products GmbH
    Inventors: Georg Roters, Steffen Frigge, Sing Pin Tay, Yao Zhi Hu, Regina Hayn, Jens-Uwe Sachse, Erwin Schoer, Wilhelm Kegel
  • Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates
    Patent number: 7094637
    Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: August 22, 2006
    Assignee: Infineon Technologies AG
    Inventors: Olaf Storbeck, Wilhelm Kegel, Jens-Uwe Sachse, Michael Stadtmüller, Regina Hayn, Erwin Schoer, Georg Roters, Steffen Frigge
  • Device and method for thermally treating semiconductor wafers
    Publication number: 20060105584
    Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.
    Type: Application
    Filed: July 25, 2003
    Publication date: May 18, 2006
    Inventors: Georg Roters, Steffen Frigge, Sing Tay, Yao Zhi Hu, Regina Hayn, Jens-Uwe Sachse, Erwin Schoer, Wilhelm Kegel
  • Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates
    Publication number: 20040121569
    Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.
    Type: Application
    Filed: October 27, 2003
    Publication date: June 24, 2004
    Inventors: Olaf Storbeck, Wilhelm Kegel, Jens-Uwe Sachse, Michael Stadtmuller, Regina Hayn, Erwin Schoer, Georg Roters, Steffen Frigge