Patents by Inventor Erya Deng

Erya Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910029
    Abstract: A complementary magnetic memory cell includes: a heavy metal film or an antiferromagnetic film, a first magnetic tunnel junction, a second magnetic tunnel junction, a first electrode, a second electrode, a third electrode, a fourth electrode, and a fifth electrode; wherein the first magnetic tunnel junction and the second magnetic tunnel junction are fabricated above the heavy metal film or the antiferromagnetic film; the first electrode, the second electrode and the third electrode are fabricated under the heavy metal film or the antiferromagnetic film; the fourth electrode is fabricated above the first magnetic tunnel junction, and the fifth electrode is fabricated above the second magnetic tunnel junction; to store one bit of data, the first magnetic tunnel junction and the second magnetic tunnel junction are arranged in a pair of complementary resistance states, wherein one magnetic tunnel junction is set to a high resistance state and the other remains unchanged.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: February 2, 2021
    Assignee: BEIHANG UNIVERSITY
    Inventors: Weisheng Zhao, Zhaohao Wang, Erya Deng
  • Publication number: 20200342927
    Abstract: A highly reliable STT-MRAM structure and an implementation method thereof are provided. The STT-MRAM structure includes: a memory block array, including a plurality of memory blocks; on-chip in-situ temperature sensors, for detecting an instantaneous temperature of each memory block; and a controller, which outputs a reading or writing operation signal based on the instantaneous temperature of each memory block detected by the on-chip in-situ temperature sensors, so as to modulate respective voltages and/or frequencies of reading and writing operations of each memory block. When the instantaneous temperature is too high, the voltages and/or frequencies of the reading and writing operations would be decreased, to the contrary when the instantaneous temperature is too low, the voltages and/or frequencies of the reading and writing operations would be increased, which expands a reliable working temperature range and lengthens a lifetime of the STT-MRAM structure.
    Type: Application
    Filed: July 14, 2020
    Publication date: October 29, 2020
    Inventors: Weisheng Zhao, Kaihua Cao, Erya Deng, Wenlong Cai, Shaohua Yan
  • Publication number: 20190051339
    Abstract: A complementary magnetic memory cell includes: a heavy metal film or an antiferromagnetic film, a first magnetic tunnel junction, a second magnetic tunnel junction, a first electrode, a second electrode, a third electrode, a fourth electrode, and a fifth electrode; wherein the first magnetic tunnel junction and the second magnetic tunnel junction are fabricated above the heavy metal film or the antiferromagnetic film; the first electrode, the second electrode and the third electrode are fabricated under the heavy metal film or the antiferromagnetic film; the fourth electrode is fabricated above the first magnetic tunnel junction, and the fifth electrode is fabricated above the second magnetic tunnel junction; to store one bit of data, the first magnetic tunnel junction and the second magnetic tunnel junction are arranged in a pair of complementary resistance states, wherein one magnetic tunnel junction is set to a high resistance state and the other remains unchanged.
    Type: Application
    Filed: October 16, 2018
    Publication date: February 14, 2019
    Inventors: Weisheng Zhao, Zhaohao Wang, Erya Deng