Abstract: A mobile charging device is an apparatus that allows a mobile electrostatic carrier (MESC) to be charged anywhere. The apparatus includes a device housing, a microprocessor, a memory module, a portable power source, a voltage booster circuit, a wireless charging coil, and at least one trigger sensor. The device housing encloses and/or serves as a base for the other components. The microprocessor and the memory module store, transfer, and process digital information and digital instructions. The portable power source provides the electrical power to charge an MESC. The voltage booster circuit increases the voltage of this electrical power before reaching the wireless charging coil. The wireless charging coil inductively delivers the electrical power to an MESC. When an MESC is proximal to the wireless charging coil, the trigger sensor activates the voltage booster circuit and the portable power source.

Abstract: An electrostatically-enhanced friction-gripping end effector is an apparatus that quickly and securely moves a semiconductor wafer from one spot to another spot. The apparatus includes a flat effector body, an electrostatic antenna, an antenna controller, and a plurality of gripping pads. The flat effector body is the main weight-bearing structure that is used to support the semiconductor wafer and acts as a base for the other components to be connected together. The electrostatic antenna generates a non-uniform electrostatic field that applies an attractive force onto the semiconductive wafer, while the plurality of gripping pads frictionally grips the semiconductive wafer. The antenna controller provides instructions to turn on, turn off, or modulate the non-uniform electrostatic field.

Abstract: A method for particle abatement in a wafer processing tool implements at least one cleaning-purposed mobile electrostatic carrier (MESC) including electrostatic field generating (EFG) circuits. Each EFG circuit is charged with the cleaning-purposed MESC. The cleaning-purposed MESC is then loaded into the wafer processing tool in a facedown orientation. A normal-purposed MESC is loaded into the wafer processing tool in a faceup orientation. Next, foreign materials are bonded to the cleaning-purposed MESC as the cleaning-purposed MESC is moved along a processing path through the wafer processing tool in the facedown orientation. The normal-purposed MESC travels the processing path during normal operation of the wafer processing tool in the faceup orientation. The cleaning-purposed MESC is then unloaded from the wafer processing tool. Next, the foreign materials are debonded from the cleaning-purposed MESC by discharging each EFG circuit with the cleaning-purposed MESC.

Abstract: A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive wafer. A dielectric thin film is superimposed across the bonding surface of MESC in order to adjust the relative permittivity between the semiconductive wafer to the MESC. This adjustment in the relative permittivity allows the MESC to further adhere the semiconductive wafer to the MESC.

Abstract: A method for particle abatement in a wafer processing tool implements at least one cleaning-purposed mobile electrostatic carrier (MESC) including electrostatic field generating (EFG) circuits. Each EFG circuit is charged with the cleaning-purposed MESC. The cleaning-purposed MESC is then loaded into the wafer processing tool in a facedown orientation. A normal-purposed MESC is loaded into the wafer processing tool in a faceup orientation. Next, foreign materials are bonded to the cleaning-purposed MESC as the cleaning-purposed MESC is moved along a processing path through the wafer processing tool in the facedown orientation. The normal-purposed MESC travels the processing path during normal operation of the wafer processing tool in the faceup orientation. The cleaning-purposed MESC is then unloaded from the wafer processing tool. Next, the foreign materials are debonded from the cleaning-purposed MESC by discharging each EFG circuit with the cleaning-purposed MESC.

Abstract: A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive wafer. A dielectric thin film is superimposed across the bonding surface of MESC in order to adjust the relative permittivity between the semiconductive wafer to the MESC. This adjustment in the relative permittivity allows the MESC to further adhere the semiconductive wafer to the MESC.

Abstract: An automated electrostatic bonding/de-bonding apparatus is used to automate a mating or separating process between a semiconductive wafer and a mobile electrostatic carrier (MESC). The apparatus includes a transfer enclosure, a robot arm, a bonding/de-bonding station, input/output (I/O) ports, I/O cassettes, and a control unit. The I/O cassettes house the different dispensable items that are used during the mating or separating process, such as semiconductive wafers, MESCs, and mated assemblies thereof. The robot arm moves the dispensable items between the I/O cassettes and the bonding/de-bonding station. The transfer enclosure prevents any external physical interference with the movement of the robot arm. The I/O ports integrated into the transfer enclosure allow the robot arm to access the I/O cassettes, which are located outside of the transfer enclosure. The control unit is used to manage the functionalities of the robot arm and the bonding/de-bonding station.

Abstract: A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive wafer. A layer of patterned material is superimposed across the bonding surface of MESC so that the cavities integrated into the layer of patterned material are able produce micro-vacuums that further adhere the semiconductive wafer to the MESC.

Abstract: An automated electrostatic bonding/de-bonding apparatus is used to automate a mating or separating process between a semiconductive wafer and a mobile electrostatic carrier (MESC). The apparatus includes a transfer enclosure, a robot arm, a bonding/de-bonding station, input/output (I/O) ports, I/O cassettes, and a control unit. The I/O cassettes house the different dispensable items that are used during the mating or separating process, such as semiconductive wafers, MESCs, and mated assemblies thereof. The robot arm moves the dispensable items between the I/O cassettes and the bonding/de-bonding station. The transfer enclosure prevents any external physical interference with the movement of the robot arm. The I/O ports integrated into the transfer enclosure allow the robot arm to access the I/O cassettes, which are located outside of the transfer enclosure. The control unit is used to manage the functionalities of the robot arm and the bonding/de-bonding station.

Abstract: A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.

Abstract: A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive process. The MESC is particularly useful during singulation for a wafer fabrication process. The MESC holds the semiconductive wafer in a constant position as the semiconductive wafer is cut into a plurality of dies. Once the MESC is discharges its EFG circuits and consequently dissipates its bonding electrostatic fields, the plurality of dies can be easily and readily removed from the MESC.

Abstract: A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.

Abstract: A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.

Abstract: A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive wafer. A layer of patterned material is superimposed across the bonding surface of MESC so that the cavities integrated into the layer of patterned material are able produce micro-vacuums that further adhere the semiconductive wafer to the MESC.

Abstract: An electrostatic carrier tray is an apparatus that is used to temporarily grasp and to transport semiconductive coupons/wafers. The apparatus mainly includes a primary substrate, a plurality of electrostatics field generating circuits, a conformal coating, a structural backing, and a power-delivery and control system. The electrostatics field generating circuits are positioned on one side of the primary substrate, and the power delivery and control system is positioned on the other side of the primary substrate. The electrostatics field generating circuits are used to bond the semiconductive coupons/wafers to the apparatus. The structural backing is used to handle the apparatus while transporting the semiconductive coupons/wafers and is also used to protect the power-delivery and control system from physical damage. The conformal coating is superimposed onto the electrostatics field generating circuits and the primary substrate as a means of protection.

Abstract: A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive process. The MESC is particularly useful during singulation for a wafer fabrication process. The MESC holds the semiconductive wafer in a constant position as the semiconductive wafer is cut into a plurality of dies. Once the MESC is discharges its EFG circuits and consequently dissipates its bonding electrostatic fields, the plurality of dies can be easily and readily removed from the MESC.

Abstract: A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.

Abstract: An electrostatic carrier tray is an apparatus that is used to temporarily grasp and to transport semiconductive coupons/wafers. The apparatus mainly includes a primary substrate, a plurality of electrostatics field generating circuits, a conformal coating, a structural backing, and a power-delivery and control system. The electrostatics field generating circuits are positioned on one side of the primary substrate, and the power delivery and control system is positioned on the other side of the primary substrate. The electrostatics field generating circuits are used to bond the semiconductive coupons/wafers to the apparatus. The structural backing is used to handle the apparatus while transporting the semiconductive coupons/wafers and is also used to protect the power-delivery and control system from physical damage. The conformal coating is superimposed onto the electrostatics field generating circuits and the primary substrate as a means of protection.