Abstract: A process flow for forming a silicided polysilicon feature avoids removal of the SiON dielectric anti-reflective coating (DARC) used to pattern the polysilicon. Instead, following polysilicon formation and etching aided by the DARC, the DARC is modified to enrich its silicon content. This modification may take the form of densification by annealing in conjunction with formation of a seal oxide, densification by annealing in an inert ambient prior to exposure to oxidizing conditions, or direct ion implantation of semiconductor material into the DARC. As a result of this modification, the DARC becomes sufficiently enriched in semiconductor material to permit formation of silicide. Thermal densification of DARC during formation of a seal oxide is sufficient to permit formation of silicide upon exposure to a silicide-forming metal.

Abstract: A method for manufacturing CMOS semiconductor devices wherein damage to the active regions of the devices due to the direct implantation of impurities is suppressed. A material is selectively deposited on a semiconductor substrate, the material having a characteristic such that formation of the material occurs on some substances such as silicon and polysilicon, and formation of the material is suppressed on other substances such as silicon dioxide and silicon nitride. Impurities are introduced into the material rather than into the substrate. The impurities are then diffused into the active regions by standard processes such as rapid thermal anneal (RTA) or furnace anneal. The material generally contains germanium, and usually is a polycrystalline silicon-germanium alloy. The diffusion depth of the impurities may be controlled with great precision by manipulating several parameters.