Abstract: Systems and methods for floating gate structures with high electrostatic discharge performance. In one embodiment, a semiconductor structure includes a floating gate device. The floating gate device includes an embedded diode characterized as having less temperature dependence than a Zener diode. The breakdown voltage of the embedded diode is greater than an operating voltage of an associated integrated circuit and a snapback trigger voltage of the embedded diode is lower than a breakdown voltage of the semiconductor structure.

Abstract: A high voltage MOS device includes a P-type substrate having an N-type buried layer formed therein. An N-type epitaxial layer overlies the substrate and a P-type well is formed in the epitaxial layer. A source region is formed in the well such that the source region is directly in contact with the well. No intermediate layer is disposed between the source region and the well. A drain region includes an extended drain region. The extended drain region, which is formed within and in contact with the well, comprises different dopant species and has a maximum dopant concentration of 3.5.times.10.sup.17 cm.sup.-3. A heavily doped main drain region is formed within and in contact with the extended drain region. The source region and extended drain region define a channel region therebetween in the well. An insulator is on a surface of the well over the channel region. A gate is over the insulator.

Abstract: A trench refill for a semiconductor device is undertaken by depositing polycrystalline Ge or Ge.sub.x Si.sub.1-x alloy at temperatures as low as 500.degree. C. The structure is then oxidized at for example 700.degree. C. to obtain a cap oxide on the trench refill. This method causes avoidance of (1) void formation, (2) facet formation, and (3) necessity of a second insulator deposition and planarization, meanwhile achieving all these advantages at a low thermal budget.

Abstract: A high voltage NMOS device includes an extended drain region formed by implantation of arsenic and phosphorus and a drivein of both the species. The dosage of arsenic is substantially higher than the dosage of phosphorus, so that upon drivein, the slower diffusing arsenic is highly concentrated near the surface of the extended drain region, while the more rapidly diffusing phosphorus provides a gradual gradient of concentration of dopant into the extended drain region.