Abstract: The present invention relates to a photonic device including a first device comprising a first set of layers, including at least a first waveguide layer, arranged in a mesa structure, and a second set of layers, including at least a second waveguide layer, formed in a second device region coupled to said first device in a light transmission direction. A cladding layer is arranged on top of the mesa structure, the second device region and the surrounding semiconductor material. A contact layer is arranged on top of the cladding layer, and a first and a second metal contact is arranged on top of the contact layer. The first set of layers, the cladding and contact layers are shaped in etching processes to remove adjacent arranged material. An insulating material is applied around the not etched cladding and contact layer. The invention also relates to a manufacturing method.

Abstract: The present invention relates to a photonic device having a first set of layers (22) including at least a first waveguide layer (3) arranged in a waveguide mesa (61). A cladding layer (7) is arranged on top of the waveguide mesa (61) and surrounding semiconductor material (1). A contact layer (8) is arranged on top of the cladding layer (7), and a metal contact (9, 80) is arranged on top of the contact layer (8). The cladding (7) and contact (8) layer are shaped in an etching process to have a mesa structure at least above the waveguide mesa (61). An insulating material (25, 82) is also applied around the mesa structure. Optionally a second photonic device having a second set or layers (31) including at least a second waveguide layer (33), may be coupled to the first photonic device in a light transmission direction thereof. The invention also relates to a method for manufacturing, the photonic device.

Abstract: The present invention relates to a photonic device having a first set of layers (22) including at least a first waveguide layer (3) arranged in a waveguide mesa (61). A cladding layer (7) is arranged on top of the waveguide mesa (61) and surrounding semiconductor material (1). A contact layer (8) is arranged on top of the cladding layer (7), and a metal contact (9, 80) is arranged on top of the contact layer (8). The cladding (7) and contact (8) layer are shaped in an etching process to have a mesa structure at least above the waveguide mesa (61). An insulating material (25, 82) is also applied around the mesa structure. Optionally a second photonic device having a second set or layers (31) including at least a second waveguide layer (33), may be coupled to the first photonic device in a light transmission direction thereof. The invention also relates to a method for manufacturing, the photonic device.

Abstract: The present invention relates to a photonic device including a first device comprising a first set of layers, including at least a first waveguide layer, arranged in a mesa structure, and a second set of layers, including at least a second waveguide layer, formed in a second device region coupled to said first device in a light transmission direction. A cladding layer is arranged on top of the mesa structure, the second device region and the surrounding semiconductor material. A contact layer is arranged on top of the cladding layer, and a first and a second metal contact is arranged on top of the contact layer. The first set of layers, the cladding and contact layers are shaped in etching processes to remove adjacent arranged material. An insulating material is applied around the not etched cladding and contact layer. The invention also relates to a manufacturing method.

Abstract: The present invention relates to a method for manufacturing a plurality of semiconductor photonic integrated circuit comprising at least a laser and a modulator connected optically to one another. Each laser and modulator has a waveguide layer being implemented on a single substrate, where said modulator is formed by use of a selective area growth technique. By providing modulator masking parts with selectable width to compensate a difference in band-gap energy in the waveguide layer between the laser and the modulator a approximate uniform difference in band-gap energy between the optically connected laser and modulator may be obtained.