Patents by Inventor Esmat Z. Hamdy
Esmat Z. Hamdy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10270451Abstract: A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p-channel transistor has a source connected to the ReRAM device, a drain connected to the switch node, and a gate connected to a bias potential. A second ReRAM device is connected to a second one of the bit lines. An n-channel transistor has a source connected to the ReRAM device a drain connected to the switch node, and a gate connected to a bias potential.Type: GrantFiled: December 9, 2016Date of Patent: April 23, 2019Assignee: Microsemi SoC CorporationInventors: John L. McCollum, Esmat Z. Hamdy
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Patent number: 10128852Abstract: A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p-channel transistor has a source connected to the ReRAM device, a drain connected to the switch node, and a gate connected to a bias potential. A second ReRAM device is connected to a second one of the bit lines. An n-channel transistor has a source connected to the ReRAM device a drain connected to the switch node, and a gate connected to a bias potential.Type: GrantFiled: November 27, 2017Date of Patent: November 13, 2018Assignee: Microsemi SoC CorporationInventors: John L. McCollum, Esmat Z. Hamdy
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Publication number: 20180083634Abstract: A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p-channel transistor has a source connected to the ReRAM device, a drain connected to the switch node, and a gate connected to a bias potential. A second ReRAM device is connected to a second one of the bit lines. An n-channel transistor has a source connected to the ReRAM device a drain connected to the switch node, and a gate connected to a bias potential.Type: ApplicationFiled: November 27, 2017Publication date: March 22, 2018Inventors: John L. McCollum, Esmat Z. Hamdy
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Publication number: 20170179959Abstract: A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p-channel transistor has a source connected to the ReRAM device, a drain connected to the switch node, and a gate connected to a bias potential. A second ReRAM device is connected to a second one of the bit lines. An n-channel transistor has a source connected to the ReRAM device a drain connected to the switch node, and a gate connected to a bias potential.Type: ApplicationFiled: December 9, 2016Publication date: June 22, 2017Applicant: Microsemi SoC CorporationInventors: John L. McCollum, Esmat Z. Hamdy
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Patent number: 5670818Abstract: In an antifuse and metal interconnect structure in an integrated circuit a substrate has an insulating layer disposed on an upper surface, a first multilayer metal interconnect layer disposed on the insulating layer, and having a first portion forming a lower antifuse electrode and a second portion forming a lower metal interconnect electrode wherein the first portion includes an upper barrier metal layer. An inter-metal dielectric layer is disposed on the lower antifuse and metal interconnect electrodes wherein the inter-metal dielectric layer includes an antifuse via formed therethrough and communicating with said lower antifuse electrode, and a metal interconnect via former therethrough communicating with the lower metal interconnect electrode, An antifuse material layer is disposed in the antifuse via, and a second multilayer metal interconnect layer is disposed on the antifuse material layer and in the upper metal interconnect electrode via and on the lower metal interconnect electrode.Type: GrantFiled: August 16, 1994Date of Patent: September 23, 1997Assignee: Actel CorporationInventors: Abdul Rahim Forouhi, Esmat Z. Hamdy, Chenming Hu, John L. McCollum
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Patent number: 5412244Abstract: Electrically-programmable low-impedance antifuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or metal having a barrier metal underneath. At least one of the two electrodes of each antifuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer.Type: GrantFiled: April 29, 1993Date of Patent: May 2, 1995Assignee: Actel CorporationInventors: Esmat Z. Hamdy, Amr M. Mohsen, John L. McCollum, Shih-Ou Chen, Steve S. Chiang
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Patent number: 5387812Abstract: A metal-to metal antifuse device is provided in a double layer metal interconnect structure. A lower electrode comprises a first multilayer metal layer interconnect disposed on an insulator. An inter-metal dielectric is disposed on the first metal layer interconnect having an antifuse via. An antifuse material layer is disposed in the antifuse via and having an upper electrode comprising a second multilayer metal layer interconnect.Type: GrantFiled: September 18, 1992Date of Patent: February 7, 1995Assignee: Actel CorporationInventors: Abdul R. Forouhi, Esmat Z. Hamdy, Chenming Hu, John L. McCollum
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Patent number: 5299150Abstract: A circuit for preventing false programming of unselected anti-fuses in an anti-fuse array includes a series impedance including a plurality of transistors which may be used for partial address selection connected between a source of programming voltage and a bit line.Type: GrantFiled: January 10, 1989Date of Patent: March 29, 1994Assignee: Actel CorporationInventors: Douglas C. Galbraith, Michael G. Ahrens, Esmat Z. Hamdy, Abdelshafy A. Eltoukhy
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Patent number: 5272101Abstract: A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.Type: GrantFiled: August 9, 1991Date of Patent: December 21, 1993Assignee: Actel CorporationInventors: Abdul R. Forouhi, Esmat Z. Hamdy, Chenming Hu, John L. McCollum
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Patent number: 5266829Abstract: Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath.Type: GrantFiled: July 8, 1992Date of Patent: November 30, 1993Assignee: Actel CorporationInventors: Esmat Z. Hamdy, Amr M. Mohsen, John L. McCullum, Shih-Ou Chen, Steve S. Chiang
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Patent number: 5134457Abstract: Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath.Type: GrantFiled: January 12, 1990Date of Patent: July 28, 1992Assignee: Actel CorporationInventors: Esmat Z. Hamdy, Amr M. Mohsen, John L. McCullum
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Patent number: 5130777Abstract: The present invention includes four approaches to reduce the unintended programming of antifuses while programming selected antifuses and to decrease the programming time. The first approach includes circuitry to maintain the voltage placed on unselected antifuses at a constant level by use of a voltage source. According to the second approach, a resistor is included in series with the voltage source. According to the third approach, a diode is included in series with the voltage source. According to the fourth approach, a MOS implementation of a diode is included in series with the voltage source.Type: GrantFiled: January 4, 1991Date of Patent: July 14, 1992Assignee: Actel CorporationInventors: Douglas C. Galbraith, Steve S. Chiang, Abdelshafy A. Eltoukhy, Esmat Z. Hamdy
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Patent number: 4943538Abstract: An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.Type: GrantFiled: March 10, 1988Date of Patent: July 24, 1990Assignee: Actel CorporationInventors: Amr M. Mohsen, Esmat Z. Hamdy, John L. McCullum
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Patent number: 4899205Abstract: Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath.Type: GrantFiled: December 28, 1987Date of Patent: February 6, 1990Assignee: Actel CorporationInventors: Esmat Z. Hamdy, Amr M. Mohsen, John L. McCullum
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Patent number: 4881114Abstract: A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type.A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.Type: GrantFiled: May 16, 1986Date of Patent: November 14, 1989Assignee: Actel CorporationInventors: Amr M. Mohsen, Esmat Z. Hamdy, John L. McCollum
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Patent number: 4876220Abstract: A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type.A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.Type: GrantFiled: November 13, 1987Date of Patent: October 24, 1989Assignee: Actel CorporationInventors: Amr M. Mohsen, Esmat Z. Hamdy, John L. McCollum
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Patent number: 4823181Abstract: An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.Type: GrantFiled: May 9, 1986Date of Patent: April 18, 1989Assignee: Actel CorporationInventors: Amr M. Mohsen, Esmat Z. Hamdy, John L. McCullum