Patents by Inventor Ethan A. Wright

Ethan A. Wright has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High efficiency apparatus and method for depositing a layer on a three dimensional structure
    Patent number: 9929015
    Abstract: In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: March 27, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Thomas R. Omstead, Simon Ruffell, Tristan Ma, Ethan A. Wright, John Hautala
  • HIGH EFFICIENCY APPARATUS AND METHOD FOR DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE
    Publication number: 20160005594
    Abstract: In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate.
    Type: Application
    Filed: July 21, 2014
    Publication date: January 7, 2016
    Inventors: Thomas R. Omstead, Simon Ruffell, Tristan MA, Ethan A. Wright, John Hautala