Abstract: A solid waste treatment system includes: a solid-liquid separator module configured to receive mixed solid and liquid waste and separating solid material from the mixed solid and liquid waste; an accumulator and macerator module configured to receive and macerate the solid material from the solid-liquid separator module; a drying module configured to receive and dry the macerated solid material from the accumulator and macerator module; and a combustion module configured to receive and combust the dried macerated solid material from the drying module.

Abstract: A colloidal quantum dot (CQD) photodetector is provided including an optical blocking shield and a CQD photodetector element on the optical blocking shield. The optical blocking shield is integrated with the CQD photodetector element to provide an integrated structure and the integrated structure is provided on a wafer. The CQD photodetector detects light with sensitivity from about 250 nm to about 5000 nm. The CQD photodetector may be included as part of high resolution applications as well as global shutters for these applications.

Abstract: A liquid waste treatment system includes: a baffle tank subsystem for particle settling; a preprocess tank subsystem downstream of the baffle tank subsystem; a process tank subsystem downstream of the preprocess tank subsystem; and a storage tank subsystem downstream of the process tank subsystem for the storage of treated liquid. A Microbial Fuel Cell (MFC) processing module may be included and may be inserted into the preprocess tank subsystem or implemented in a second process tank downstream of the process tank subsystem. A faster disinfection may occur in the process tank subsystem, and a slower disinfection may occur in the second process tank according to distinct respective kill curves. An electrochemical cell may be operated in a pulse mode in liquid waste in a pulsed mode.

Abstract: A liquid waste treatment system includes: a baffle tank subsystem for particle settling; a preprocess tank subsystem downstream of the baffle tank subsystem; a process tank subsystem downstream of the preprocess tank subsystem; and a storage tank subsystem downstream of the process tank subsystem for the storage of treated liquid. A Microbial Fuel Cell (MFC) processing module may be included and may be inserted into the preprocess tank subsystem or implemented in a second process tank downstream of the process tank subsystem. A faster disinfection may occur in the process tank subsystem, and a slower disinfection may occur in the second process tank according to distinct respective kill curves. An electrochemical cell may be operated in a pulse mode in liquid waste in a pulsed mode.

Abstract: A solid waste treatment system includes: a solid-liquid separator module configured to receive mixed solid and liquid waste and separating solid material from the mixed solid and liquid waste; an accumulator and macerator module configured to receive and macerate the solid material from the solid-liquid separator module; a drying module configured to receive and dry the macerated solid material from the accumulator and macerator module; and a combustion module configured to receive and combust the dried macerated solid material from the drying module.

Abstract: A flexible electronic assembly includes a flexible current-carrying device, an electrically insulating flexible substrate, and an electronic device embedded in the substrate. The electronic device is mounted face-down on the current-carrying device such that a contact side or component side of the electronic device faces the current-carrying device and is positioned at an interface between the current-carrying device and the substrate. The current-carrying device, substrate, and electronic device are co-planar at the interface. This configuration enables the flexible electronic assembly to have an ultra-thin thickness, for example on the order of micrometers.

Abstract: A flexible electronic assembly includes a flexible current-carrying device, an electrically insulating flexible substrate, and an electronic device embedded in the substrate. The electronic device is mounted face-down on the current-carrying device such that a contact side or component side of the electronic device faces the current-carrying device and is positioned at an interface between the current-carrying device and the substrate. The current-carrying device, substrate, and electronic device are co-planar at the interface. This configuration enables the flexible electronic assembly to have an ultra-thin thickness, for example on the order of micrometers.

Abstract: A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer.

Abstract: A semiconductor includes first quantum dots and second quantum dots of a lesser amount, which are dispersed throughout the first quantum dots. The second quantum dots have a different size or composition than the first quantum dots such that the second quantum dots have a first exciton peak wavelength longer than a first exciton peak wavelength of the first quantum dots. The quantum dot layer includes a valence band, a conduction band, and an intermediate band having an energy level within a bandgap between the valence band and the conduction band. The quantum dots may be solution processed. The semiconductor may be utilized to form an electronic heterojunction, and optoelectronic devices including the electronic heterojunction.

Abstract: Integrated upconversion devices capable of upconverting incident visible to short wavelength infrared photons to visible photons are disclosed. The device may include a quantum dot-based photodiode and a light-emitting diode. The device may further include a gain element such as a thin-film transistor.

Abstract: A temperature sensor includes a photon source, a fluorescent element and a photodetector. The fluorescent element includes a temperature-insensitive first fluorophore and a temperature-sensitive second fluorophore. The photodetector includes a first photosensor exhibiting a first spectral responsivity and a second photosensor exhibiting a second spectral responsivity. To measure a temperature of a surface, the fluorescent element may be placed adjacent to the surface and irradiated with a photon beam. First photons emitted from the first fluorophore and second photons emitted from the second fluorophore are collected. The first and second photons may be transmitted as a single dichromatic beam to the photodetector. The photosensors generate two different photodetector output signals, the ratio of which may be correlated to temperature.

Abstract: Integrated upconversion devices capable of upconverting incident visible to short wavelength infrared photons to visible photons are disclosed. The device may include a quantum dot-based photodiode and a light-emitting diode. The device may further include a gain element such as a thin-film transistor.

Abstract: A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer.

Abstract: A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer.

Abstract: An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit increased charge carrier mobility.

Abstract: An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit in creased charge carrier mobility.

Abstract: A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer.

Abstract: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals.

Abstract: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals.