Abstract: In a Field Effect Transistor (FET) with a semiconductor channel the use of a high Tc oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.

Abstract: To provide simpler, more efficient methods for making scintillator arrays, one embodiment of the present invention is a method for making a scintillator array. The method includes extruding a mixture of a scintillator powder and a binder into rods; laminating the extruded rods with a sinterable reflector material; and sintering the laminated rods and reflector material into a scintillator block. Scintillator array embodiments of the present invention are useful in many types of pixelated radiation detectors, such as those used in computed tomography systems.

Abstract: To provide simpler, more efficient methods for making scintillator arrays, one embodiment of the present invention is a method for making a scintillator array. The method includes extruding a mixture of a scintillator powder and a binder into rods; laminating the extruded rods with a sinterable reflector material; and sintering the laminated rods and reflector material into a scintillator block. Scintillator array embodiments of the present invention are useful in many types of pixelated radiation detectors, such as those used in computed tomography systems.

Abstract: A thermomechanical process for producing high strength and thermally stable alloys, comprising the steps of: pre-heating an alloy bar or rod stock of a pre-selected size at a temperature below that at which grain growth occurs; and thereafter rotoforging the heated alloy bar or rod stock at a sufficient deformation level and temperature to fragment the grain boundary phases of the alloy. The resulting alloy is characterized by an ultra-fine, very uniform grain size, high tensile strength at room and high temperatures, good ductility, and a stress-rupture rate that is about twice as long as conventional alloys that have not undergone the thermomechanical process.

Abstract: A system and method are proposed for cooling the anode of an X-ray tube. A bearing shaft associated with the anode has an associated single rotating seal there around, and contains a liquid metal. A primary liquid metal flow path is used to transfer heat from the anode, and a secondary liquid metal flow path is provided to seal the single rotating seal. Accordingly, the present invention provides an effective means for containing liquid metal in the bearing shaft of an anode assembly, and using the liquid metal to cool the anode of the X-ray tube.

Abstract: A method for assembling a rotating X-ray tube structure ensures balance retention during the life of the tube. The X-ray tube structure has a cathode for emitting electrons, and a rotor and a bearing assembly for facilitating rotation of an anode. At least one joint is identified in the X-ray tube structure and interference fit assembly is used to eliminate shifts at the joint. The interference fit assembly is particularly advantageous for eliminating even the minutest shifts in the main joints of the anode assembly. Interference fit assembly can be applied between the rotor and the anode target to provide a first joint having balance retention; and interference fit assembly can be applied between the bearing assembly and the rotor to provide a second joint having balance retention.

Abstract: Shallow junctions of a first conductivity type in a semiconductor of the opposite conductivity type are fabricated by doping the substrate with a dopant of an opposite conductivity type than the first conductivity type to preamorphize portions of the substrate. The dopant of the opposite conductivity type must have a molecular weight that is higher than the molecular weight of the substrate. The substrate is then doped with the dopant of the first conductivity type to form the shallow junctions.