Abstract: A capacitive radiofrequency microelectromechanical system includes a metal membrane suspended above an RF transmission line on the surface of a substrate, wherein the metal membrane includes: a lower element having a first part located partially above the electrodes, which are covered by elements made of a first dielectric material, and partially above the RF line, which is covered by an element made of a second dielectric material; an upper element located above the first part of the lower element; the activation electrodes being arranged on either side of the RF transmission line; the ground planes being arranged on either side of the RF line and along axes parallel to the first axis X; the membrane having flexible areas consisting of some of the second parts of the lower element and a rigid area consisting of the stack of the first part of the lower element and the upper element.

Abstract: A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of Ge1-xSnx using a mixture comprising dichlorine (Cl2) and dinitrogen (N2) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of Ge1-xSnx on the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of Ge1-xSnx according to the etching method. A conduction channel made of Ge1-xSnx for a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of Ge1-xSnx.

Abstract: A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of Ge1-xSnx using a mixture comprising dichlorine (Cl2) and dinitrogen (N2) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of Ge1-xSnx on the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of Ge1-xSnx according to the etching method. A conduction channel made of Ge1-xSnx for a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of Ge1-xSnx.

Abstract: A microstructured substrate includes a plurality of at least one elementary microstructure. An electrical storage device, and more particularly an all-solid-state battery, can include the microstructured substrate.

Abstract: A microstructured substrate includes a plurality of at least one elementary microstructure. An electrical storage device, and more particularly an all-solid-state battery, can include the microstructured substrate.