Patents by Inventor Etienne Gheeraert

Etienne Gheeraert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CAPACITOR COMPRISING A STACK OF LAYERS MADE OF A SEMICONDUCTOR MATERIAL HAVING A WIDE BANDGAP
    Publication number: 20240154045
    Abstract: A capacitor comprises a stack of layers made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers comprising: an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers having a resistivity less than or equal to 10 kohm·cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer, the two contact layers being arranged on either side of the intermediate layer to form two pin junctions.
    Type: Application
    Filed: March 3, 2022
    Publication date: May 9, 2024
    Inventors: Gauthier Chicot, Khaled Driche, David Eon, Etienne Gheeraert, Cédric Masante, Julien Pernot
  • Diamond MIS transistor
    Patent number: 11569381
    Abstract: The invention relates to a deep depletion MIS transistor (100), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate (111) arranged on the channel region and separated from the channel region by a dielectric layer (113).
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: January 31, 2023
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, INSTITUT POLYTECHNIQUE DE GRENOBLE, UNIVERSITE GRENOBLE ALPES
    Inventors: Julien Pernot, Nicolas Rouger, David Eon, Etienne Gheeraert, Gauthier Chicot, Toan Thanh Pham, Florin Udrea
  • Diamond MIS Transistor
    Publication number: 20200235240
    Abstract: The invention relates to a deep depletion MIS transistor (100), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate (111) arranged on the channel region and separated from the channel region by a dielectric layer (113).
    Type: Application
    Filed: July 18, 2018
    Publication date: July 23, 2020
    Inventors: Julien PERNOT, Nicolas ROUGER, David EON, Etienne GHEERAERT, Gauthier CHICOT, Toan Thanh PHAM, Florin UDREA
  • METHOD FOR PRODUCING A SCHOTTKY DIODE ON A DIAMOND SUBSTRATE
    Publication number: 20160071936
    Abstract: A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer.
    Type: Application
    Filed: April 18, 2014
    Publication date: March 10, 2016
    Applicants: Centre National de la Recherche Scientifique, Universite Joseph Fourier, Institut Polytechnique de Grenoble
    Inventors: David Eon, Etienne Gheeraert, Pierre Muret, Julien Pernot, Aboulaye Traore