Patents by Inventor Etienne Quesnel
Etienne Quesnel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230397490Abstract: An active light-emitting layer composition including a thermally activated delayed fluorescence (TADF) molecule with TADF properties as a host material and a luminescent molecule with circularly polarized (CP) properties as a dopant. Also, a light-emitting device, such as an organic light-emitting diodes (OLED), including the active light-emitting layer made of this composition.Type: ApplicationFiled: October 29, 2021Publication date: December 7, 2023Applicants: UNIVERSITE DE RENNES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS -, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE RENNES, ECOLE NATIONALE SUPERIEURE DE CHIMIE DE RENNES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Ludovic FAVEREAU, Jeanne CRASSOUS, Sitthichok KASEMTHAVEECHOK, Kais DHBAIBI, Grégory PIETERS, Benoît RACINE, Etienne QUESNEL
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Patent number: 11506608Abstract: A device for exciting objects with an excitation radiation and for detecting a photoluminescence radiation emitted by the objects after the absorption of the excitation radiation. The device includes a wall in contact with the objects, an organic light-emitting diode for emitting the excitation radiation and transparent to the photoluminescence radiation, an optical resonator tuned to the wavelength of the photoluminescence radiation and located on the side of the organic light-emitting diode opposite to the wall, and at least one sensor of the photoluminescence radiation arranged on the side of the optical resonator opposite to the organic light-emitting diode.Type: GrantFiled: October 29, 2020Date of Patent: November 22, 2022Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Benoit Racine, Pierre Blandin, Etienne Quesnel
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Publication number: 20220187206Abstract: Device (1) for characterizing a substance (2) capable of emitting a photoluminescence radiation (Rp) in a first spectral range, the device (1) comprising: an electroluminescent component (3), at least semi-transparent in the first spectral range, and comprising first and second opposite surfaces (30, 31), the electroluminescent component (3) being suitable for emitting an excitation radiation (Re1) outgoing from the first surface (30), emitted in a first spectral range according to a circular polarization state; the excitation radiation (Re1) outgoing from the first surface (30) being able to pass through the electroluminescent component (3), after being reflected, and exit from the second surface (31); a polarization filter (4), arranged to filter the excitation radiation (Re2) outgoing from the second surface (31), and suitable for modifying the circular polarization state so as to obtain an extinguishing of the excitation radiation (Re2) outgoing from the second surface (31) of the electroluminescent coType: ApplicationFiled: December 14, 2021Publication date: June 16, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit RACINE, Pierre BLANDIN, Etienne QUESNEL
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Patent number: 11362296Abstract: A device includes first and second electrodes that are at least partially transparent in a spectral domain; an electroluminescent layer that lies between the first and second electrodes suitable for emitting electromagnetic radiation in the spectral domain, the electromagnetic radiation being circularly polarized in a first polarization direction; a structured substrate, the first electrode lying between the structured substrate and the electroluminescent layer, the structured substrate including features that are reflective in the spectral domain, and that possess a hollow geometric shape configured so that electromagnetic radiation that passes through the first electrode is reflected from the reflective features while preserving the first polarization direction, a filler material that is transparent in the spectral domain and that is arranged to fill the reflective features so that the structured substrate has a planar surface.Type: GrantFiled: August 14, 2020Date of Patent: June 14, 2022Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Etienne Quesnel, Marianne Consonni, Sylvia Meunier, Benoit Racine
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Publication number: 20210131969Abstract: A device for exciting objects with an excitation radiation and for detecting a photoluminescence radiation emitted by the objects after the absorption of the excitation radiation. The device includes a wall in contact with the objects, an organic light-emitting diode for emitting the excitation radiation and transparent to the photoluminescence radiation, an optical resonator tuned to the wavelength of the photoluminescence radiation and located on the side of the organic light-emitting diode opposite to the wall, and at least one sensor of the photoluminescence radiation arranged on the side of the optical resonator opposite to the organic light-emitting diode.Type: ApplicationFiled: October 29, 2020Publication date: May 6, 2021Applicant: Commissarat à I'Énergie Atomique et aux Énergies AlternativesInventors: Benoit Racine, Pierre Blandin, Etienne Quesnel
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Publication number: 20210050544Abstract: A device includes first and second electrodes that are at least partially transparent in a spectral domain; an electroluminescent layer that lies between the first and second electrodes suitable for emitting electromagnetic radiation in the spectral domain, the electromagnetic radiation being circularly polarized in a first polarization direction; a structured substrate, the first electrode lying between the structured substrate and the electroluminescent layer, the structured substrate including features that are reflective in the spectral domain, and that possess a hollow geometric shape configured so that electromagnetic radiation that passes through the first electrode is reflected from the reflective features while preserving the first polarization direction, a filler material that is transparent in the spectral domain and that is arranged to fill the reflective features so that the structured substrate has a planar surface.Type: ApplicationFiled: August 14, 2020Publication date: February 18, 2021Applicant: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Etienne QUESNEL, Marianne CONSONNI, Sylvia MEUNIER, Benoit RACINE
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Patent number: 8668963Abstract: A method for diffusing metal particles including a composite layer deposited on a substrate, with the composite layer further including at least one dielectric matrix, and where the diffusion of the metal particles towards the substrate is achieved by means of a plasma treatment.Type: GrantFiled: November 26, 2012Date of Patent: March 11, 2014Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, Centre National de la Recherche ScientifiqueInventors: Laurent Bedel, Cyril Cayron, Michel Jouve, Francis Maury, Etienne Quesnel
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Publication number: 20140001031Abstract: The nanoparticle production device includes a target provided with a nanoparticle source surface, and a magnetron generating a first magnetic field, the target being mounted on the magnetron and the first magnetic field forming field lines at the level of the nanoparticle source surface. The device further includes balancing means of the first magnetic field at the level of the target, arranged to close fleeing field lines of the first magnetic field and to keep said lines closed at the level of said nanoparticle source surface, said balancing means being distinct from the magnetron.Type: ApplicationFiled: February 27, 2012Publication date: January 2, 2014Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Etienne Quesnel, Viviane Muffato, Stephanie Parola
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Publication number: 20130207070Abstract: Material comprising a matrix made of semiconducting or insulating, transparent material in which core/shell type nanoparticles are dispersed, the core of which consists of a semiconductor and the shell of which is formed from a material chosen from the oxides TiO2 and/or CeO2. These nanocomposite materials may especially be used as optoelectronic absorbers.Type: ApplicationFiled: June 7, 2011Publication date: August 15, 2013Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventor: Etienne Quesnel
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Patent number: 8031341Abstract: The invention relates to a plasmon resonance optical detection device including a stack of layers comprising: a metal layer based on a noble metal that will generate said plasmon, a layer of dielectric material, at least one first semiconductor bond layer placed between said metal layer and said dielectric layer, said semiconductor layer covering a face of the metal layer.Type: GrantFiled: October 31, 2007Date of Patent: October 4, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Etienne Quesnel, Pierre Barritault, Gilles Grand
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Patent number: 7927765Abstract: The invention concerns a process for forming an optical component comprising: a—formation of a multi-layer stack (32, 34) with an adjustment layer (30) made of a metal-semiconductor mix formed in or on the stack, b—etching a part of the multi-layer stack, including at least a part of the adjustment layer, c—an annealing step to contract the adjustment layer within less than 1 nm.Type: GrantFiled: April 24, 2006Date of Patent: April 19, 2011Assignee: Commissariat a l'Energie AtomiqueInventor: Etienne Quesnel
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Publication number: 20100033725Abstract: The invention relates to a plasmon resonance optical detection device including a stack of layers comprising: a metal layer based on a noble metal that will generate said plasmon, a layer of dielectric material, at least one first semiconductor bond layer placed between said metal layer and said dielectric layer, said semiconductor layer covering a face of the metal layer.Type: ApplicationFiled: October 31, 2007Publication date: February 11, 2010Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Etienne Quesnel, Pierre Barritault, Gilles Grand
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Publication number: 20090130569Abstract: The invention concerns a process for forming an optical component comprising: a—formation of a multi-layer stack (32, 34) with an adjustment layer (30) made of a metal-semiconductor mix formed in or on the stack, b—etching a part of the multi-layer stack, including at least a part of the adjustment layer, c—an annealing step to contract the adjustment layer within less than 1 nm.Type: ApplicationFiled: April 24, 2006Publication date: May 21, 2009Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventor: Etienne Quesnel
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Publication number: 20060154495Abstract: A detached particle capture means by laser (4) allows them to be attracted and prevented from dropping back better than a traditional blow-off flushing means would. Various categories of attractive forces may be implemented. It will also be possible to use a particle destruction means, like a second high-power laser above the worked surface (3).Type: ApplicationFiled: June 12, 2003Publication date: July 13, 2006Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Jean Hue, Etienne Quesnel, Florian Evers
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Patent number: 7012753Abstract: An optical device reflecting a range of wavelengths comprised between 10 nm and 20 nm comprises alternate superposed first and second layers. The first layers are made of metal or metallic compound and the second layers are formed by an amorphous silicon compound chosen from a-Si—Hx, a-Si—CHx, a-Si—Cx, a-Si—OHx, a-Si—Fx, a-Si—FHx, a-Si—Nx, a-Si—NHx, x being comprised between 0.01 and 0.3. The use of second layers of amorphous silicon compound enables the mechanical stresses of the optical device to be stabilized up to at least 200° C. The optical device is preferably used as reflector for a lithography mask in the extreme ultraviolet (EUV).Type: GrantFiled: March 18, 2004Date of Patent: March 14, 2006Assignee: Commissariat a l'Energie AtomiqueInventor: Etienne Quesnel
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Publication number: 20050051421Abstract: A process designed to prevent deposition of polarized contaminating particles on the surface of a micro-component consists, according to the invention, in sputtering a beam of particles between the contamination source and the micro-component. At least a part of the particles of the beam has an opposite polarity from that of the contaminating particles. The beam of particles is preferably a plasma and is designed to drag the contaminating particles away from the free surface of the micro-component to a collecting element. The invention also relates to a micro-component storage device and a thin layer deposition device respectively implementing such a process.Type: ApplicationFiled: April 5, 2004Publication date: March 10, 2005Applicant: Commissariat a I'Energie AtomiqueInventors: Etienne Quesnel, Viviane Muffato
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Publication number: 20040233535Abstract: An optical device reflecting a range of wavelengths comprised between 10 nm and 20 nm comprises alternate superposed first and second layers. The first layers are made of metal or metallic compound and the second layers are formed by an amorphous silicon compound chosen from a-Si—Hx, a-Si—CHx, a-Si—Cx, a-Si—OHx, a-Si—Fx, a-Si—FHx, a-Si—Nx, a-Si—NHx, x being comprised between 0.01 and 0.3. The use of second layers of amorphous silicon compound enables the mechanical stresses of the optical device to be stabilized up to at least 200° C. The optical device is preferably used as reflector for a lithography mask in the extreme ultraviolet (EUV).Type: ApplicationFiled: March 18, 2004Publication date: November 25, 2004Applicant: Commissariat a l'Energie AtomiqueInventor: Etienne Quesnel
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Patent number: 6335142Abstract: Light absorbing coating with high absorption capacity. This coating comprises at least one thin optically discontinuous metal layer (8), absorbent within a determined spectral range in the visible-near infrared range, and at least one dielectric layer (10) transparent within this range and formed on the thin layer. Application to imagery.Type: GrantFiled: November 16, 1998Date of Patent: January 1, 2002Assignee: Commissariat a l'Energie AtomiqueInventors: Etienne Quesnel, Patrick Chaton
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Patent number: 5879820Abstract: The invention relates to a multilayer stack of fluoride materials usable in optics and its production process.This stack is constituted by alternating layers of a first, high index, fluoride material such as YF.sub.3 and a second, low index fluoride material such as LiF, able to form together a specific, stable compound such as YLiF.sub.4, so that the interface between two adjacent layers of the stack is at least partly formed from said compound.Type: GrantFiled: June 20, 1997Date of Patent: March 9, 1999Assignees: Commissariat a l'Energie Atomique, Etat FrancaisInventors: Etienne Quesnel, Jean-Yves Robic, Bernard Rolland, Jean Dijon