Patents by Inventor Etsuji Ohmura

Etsuji Ohmura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laser processing method and laser processing system
    Patent number: 8890027
    Abstract: An object to be processed 1 is irradiated with laser light L with a standard pulse waveform, so as to form a molten processed region 131, which has a larger size in the thickness direction of the object 1 and is easy to generate a fracture 24 in the thickness direction of the object 1, within a silicon wafer 111, and with laser light L with a retarded pulse waveform, so as to form a molten processed region 132, which has a smaller size in the thickness direction of the object 1 and is hard to generate the fracture 24 in the thickness direction of the object 1, within a silicon wafer 112.
    Type: Grant
    Filed: March 6, 2007
    Date of Patent: November 18, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Fumitsugu Fukuyo, Etsuji Ohmura, Kenshi Fukumitsu, Masayoshi Kumagai, Kazuhiro Atsumi, Naoki Uchiyama
  • LASER PROCESSING METHOD AND LASER PROCESSING DEVICE
    Publication number: 20120223061
    Abstract: A laser processing method for forming a modification region serving as a starting point of cutting inside a member to be cut along a planned cutting line by relatively moving an optical axis of a condenser lens along the planned cutting line of the member and by irradiating the member with focused laser light, wherein a plurality of cross-sectional focused spots is simultaneously formed on a section which is perpendicular to the optical axis of the condenser lens at positions having a predetermined depth from a surface of the member and which is parallel to the surface and, at that time, at least one cross-sectional focused spot of the plurality of cross-sectional focused spots is formed on a projection line of the planned cutting line onto the cross section to form one or more inside modification regions having a desired shape.
    Type: Application
    Filed: September 1, 2010
    Publication date: September 6, 2012
    Applicant: AISIN SEIKI KABUSHIKI KAISHA
    Inventors: Takafumi Atsumi, Yuji Ikeda, Etsuji Ohmura
  • LASER PROCESSING METHOD AND LASER PROCESSING SYSTEM
    Publication number: 20090236324
    Abstract: An object to be processed 1 is irradiated with laser light L with a standard pulse waveform, so as to form a molten processed region 131, which has a larger size in the thickness direction of the object 1 and is easy to generate a fracture 24 in the thickness direction of the object 1, within a silicon wafer 111, and with laser light L with a retarded pulse waveform, so as to form a molten processed region 132, which has a smaller size in the thickness direction of the object 1 and is hard to generate the fracture 24 in the thickness direction of the object 1, within a silicon wafer 112.
    Type: Application
    Filed: March 6, 2007
    Publication date: September 24, 2009
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Fumitsugu Fukuyo, Etsuji Ohmura, Kenshi Fukumitsu, Masayoshi Kumagai, Kazuhiro Atsumi, Naoki Uchiyama