Abstract: There is provided a thermoelectric conversion element and a thermoelectric conversion module capable of ensuring a temperature difference between the front and the rear of the thermoelectric conversion element even in a high-temperature environment and presenting a high power generation performance. The thermoelectric conversion element including a sintered body constitutes a crystal grain laminated in a transverse direction in which a length in a longitudinal direction of the crystal grain is longer than a length in the transverse direction using at least some of crystal grains constituting the sintered body.

Abstract: Provided is a probe card for LSI inspection that can achieve electrical conduction to electrodes on an LSI with a low load without damaging the electrodes and a structural body therebelow, even if the electrodes are arranged at a narrow pitch and in a complex manner. A contact terminal is formed in a truncated square pyramidal recess provided on a film-shaped probe. A dent is often formed on a surface of the film-shaped probe just above the contact terminal. A resin coating film is formed so as to eliminate the dent and flatten the surface of the film-shaped probe. At this time, it is preferred that an amount of cure shrinkage of a resin paste for forming the resin coating film is 0.1% or less.

Abstract: In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.

Abstract: A semiconductor chip inspection apparatus largely reduces occurrence of damage due to foreign matter in an inspection process and improves durability at the same time of miniaturization is provided. As to a highly accurate thin-film probe sheet which performs: a contact to electrode pads arranged at a narrow pitch and a high density along with integration of semiconductor chip; and an inspection of semiconductor chips, by providing two layers of metal films selectively removable in a step-like shape in a periphery region of fine contact terminal having sharp tips and arranged at a high density and a narrow pitch at the same level as electrode pads, an upper periphery of the contact terminals is covered with an insulating film, and a large space region is formed.

Abstract: In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.

Abstract: In the connecting apparatus for inspecting the semiconductor chip, in which contact terminals are electrically connected to each of the plurality of electrode pads formed on the semiconductor chips, a part of metal projections in the shape of quadrangular pyramid which constitute the contact terminals is composed of insulator in the present invention. Therefore, the inspection of semiconductor chips performed by simultaneously transmitting high-speed signals to the plurality of minute electrode pads arranged at a narrow pitch on the semiconductor chips can be realized.