Patents by Inventor Etsushi Obi

Etsushi Obi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device having data erasing mechanism
    Patent number: 5751636
    Abstract: In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.
    Type: Grant
    Filed: January 21, 1997
    Date of Patent: May 12, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kiyomi Naruke, Tomoko Suzuki, Seiji Yamada, Etsushi Obi, Masamitsu Oshikiri
  • Semiconductor memory device having data erasing mechanism
    Patent number: 5623445
    Abstract: In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: April 22, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kiyomi Naruke, Tomoko Suzuki, Seiji Yamada, Etsushi Obi, Masamitsu Oshikiri
  • Method of operating a nonvolatile semiconductor memory device
    Patent number: 5452248
    Abstract: In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.
    Type: Grant
    Filed: June 26, 1992
    Date of Patent: September 19, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kiyomi Naruke, Tomoko Suzuki, Seiji Yamada, Etsushi Obi, Masamitsu Oshikiri