Abstract: A method and system for deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the method comprising, defining a qualifying criteria based on past measurement data; measuring at least one parameter of one or more semiconductor devices representative of the batch; comparing said at least one parameter against the qualifying criteria; and if said at least one parameter qualifies according to the qualifying criteria, deriving the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.