Abstract: Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing and developing the photoresist layer to form guide patterns; (c) forming a neutral layer over the wafer; (d) developing the guide patterns to remove them and form neutral layer patterns having an opening part; (e) coating block copolymer of directed self assembly material on the substrate and heating the substrate over a glass transition temperature (Tg) to form directed self-assembly patterns; and (f) selectively etching a part having relatively small etching resistivity (or high etching rate) among the directed self-assembly patterns by using O2 plasma to form fine patterns.

Abstract: An I-line photoresist composition, having excellent thermal stability at high temperature of 200-250° C., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by Formula 1, repeating unit represented by Formula 2, repeating unit represented by Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent. Formulas 1-3 are located in the specification. R* and R** are independently a hydrogen atom or a methyl group. R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3-15 carbon atoms, containing or not containing 1-4 oxygen atoms. R2 is linear, branch or cyclic hydrocarbonyl group of 1-30 carbon atoms, containing or not containing 1-4 oxygen atoms.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: Disclosed are a photosensitive compound containing oxime group which is directly decomposed by exposure to light, which is a molecular resist whose size is smaller than conventional polymer for photoresist, and a photoresist composition including the same. The photosensitive molecular compound has a structure represented by a following formula. In Formula, R1 is hydrogen atom or methyl group (CH3); Ra and Rb each is independently alkyl group of 1-6 carbon atoms, alkylcarbonyl group of 2-7 carbon atoms, aryl group of 6-10 carbon atoms or arylcarbonyl group of 7-11 carbon atoms, and Ra and Rb form one group as an united body, alkyl or cycloalkyl group of 1-20 carbon atoms or arylalkyl group of 7-20 carbon atoms which are doubly bonded to nitrogen atom.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.

Abstract: Disclosed are a photosensitive compound containing oxime group which is directly decomposed by exposure to light, which is a molecular resist whose size is smaller than conventional polymer for photoresist, and a photoresist composition including the same. The photosensitive molecular compound has a structure represented by a following formula. In Formula, R1 is hydrogen atom or methyl group (CH3); Ra and Rb each is independently alkyl group of 1-6 carbon atoms, alkylcarbonyl group of 2-7 carbon atoms, aryl group of 6-10 carbon atoms or arylcarbonyl group of 7-11 carbon atoms, and Ra and Rb form one group as an united body, alkyl or cycloalkyl group of 1-20 carbon atoms or arylalkyl group of 7-20 carbon atoms which are doubly bonded to nitrogen atom.

Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.