Abstract: According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector.

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract: According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector.

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

Abstract: Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

Abstract: Methods for removing process byproducts from a load lock chamber are provided herein. In some embodiments, a method for removing process byproducts from a load lock chamber may include: performing a process on a substrate disposed within a process chamber; transferring the substrate from the process chamber to a load lock chamber; and providing an inert gas to the load lock chamber via at least one gas line while transferring the substrate from the process chamber to the load lock chamber to remove process byproducts from the load lock chamber.

Abstract: A method of processing traffic in a Virtual Private LAN service includes replacing a MAC address from a packet with a realm specific Virtual Private Network address. The packet with the realm specific Virtual Private Network address is then processed.