Patents by Inventor Eugene A. Fitzergald

Eugene A. Fitzergald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050077511
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Application
    Filed: October 19, 2004
    Publication date: April 14, 2005
    Applicant: AmberWave Systems Corporation
    Inventor: Eugene Fitzergald
  • Publication number: 20040161947
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Application
    Filed: February 9, 2004
    Publication date: August 19, 2004
    Applicant: AmberWare Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6724008
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography. In accordance with one embodiment of the invention, there is provided a semiconductor structure including a planarized relaxed Si1−xGex layer on a substrate; and a device heterostructure deposited on said planarized relaxed Si1−xGex layer including at least one strained layer.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: April 20, 2004
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6723661
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: April 20, 2004
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6703688
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: March 9, 2004
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6680495
    Abstract: A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: January 20, 2004
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6677655
    Abstract: A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: January 13, 2004
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6645829
    Abstract: A structure and method of fabricating an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: November 11, 2003
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Patent number: 6593641
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: July 15, 2003
    Assignee: AmberWave Systems Corporation
    Inventor: Eugene A. Fitzergald
  • Publication number: 20030077867
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Application
    Filed: July 16, 2001
    Publication date: April 24, 2003
    Inventor: Eugene A. Fitzergald
  • Publication number: 20020068396
    Abstract: A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).
    Type: Application
    Filed: August 1, 2001
    Publication date: June 6, 2002
    Inventor: Eugene A. Fitzergald
  • Publication number: 20020066899
    Abstract: A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).
    Type: Application
    Filed: August 1, 2001
    Publication date: June 6, 2002
    Inventor: Eugene A. Fitzergald
  • Publication number: 20020040983
    Abstract: A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the wafer is fully compatible with standard Si CMOS manufacturing. For wavelengths of light longer than the bandgap of Si (1.1 &mgr;m), Si is completely transparent and therefore optical signals can be transmitted between the embedded optoelectronic layer and an external waveguide using either normal incidence (through the Si substrate or top Si cap layer) or in-plane incidence (edge coupling).
    Type: Application
    Filed: August 1, 2001
    Publication date: April 11, 2002
    Inventor: Eugene A. Fitzergald