Patents by Inventor Eugene A. Imhoff

Eugene A. Imhoff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
    Patent number: 7759186
    Abstract: Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.
    Type: Grant
    Filed: July 6, 2009
    Date of Patent: July 20, 2010
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Eugene A. Imhoff, Francis J. Kub, Karl D. Hobart
  • Junction Termination Extension with Controllable Doping Profile and Controllable Width for High-Voltage Electronic Devices
    Publication number: 20100055882
    Abstract: Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.
    Type: Application
    Filed: July 6, 2009
    Publication date: March 4, 2010
    Applicant: The Government of the United States of America, as rpresented by the Secretary of the Navy
    Inventors: Eugene A. Imhoff, Francis J. Kub, Karl D. Hobart
  • On-chip alignment fiducials for surface emitting devices
    Patent number: 5981975
    Abstract: An optoelectronic apparatus has, a die having a mesa (103) with a surface emitting optical device and a metallized p-type contact (209), a planar pad (201) adjacent the mesa for Z-height registration with an optical bench, a first notch (206) having been provided by a first etch and having thereon a metallized n-type contact (208) that is coplanar with the p-type contact (209), a second notch having a side surface (204) having been provided by a second etch, the second notch to abut the optical bench along an x-axis, the first notch (206) extending to the second notch, and the die having side surfaces (207) to abut the optical bench along a y-axis, and the second notch extending to the side surfaces (207).
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: November 9, 1999
    Assignee: The Whitaker Corporation
    Inventor: Eugene A. Imhoff