Abstract: Various embodiments of the present disclosure provide a casino patron engagement system that facilitates engagement among casino employees and casino patrons to engender patron loyalty.

Abstract: Various embodiments of the present disclosure provide a casino floor service management system and method that integrates with a casino management system of a casino and leverages the knowledge and experience of casino floor service management system users, such as technicians, floor attendants, and hostesses, to efficiently resolve service floor events in a timely manner.

Abstract: Various embodiments of the present disclosure provide a casino patron engagement system that facilitates engagement among casino employees and casino patrons to engender patron loyalty.

Abstract: Various embodiments of the present disclosure provide a casino floor service management system and method that integrates with a casino management system of a casino and leverages the knowledge and experience of casino floor service management system users, such as technicians, floor attendants, and hostesses, to efficiently resolve service floor events in a timely manner.

Abstract: Various embodiments of the present disclosure provide a casino patron engagement system that facilitates engagement among casino employees and casino patrons to engender patron loyalty.

Abstract: Various embodiments of the present disclosure provide a casino floor service management system and method that integrates with a casino management system of a casino and leverages the knowledge and experience of casino floor service management system users, such as technicians, floor attendants, and hostesses, to efficiently resolve service floor events in a timely manner.

Abstract: The invention is a semiconductor avalanche photodetector including an essentially undoped multiplication layer; a thin, undoped light absorbing layer; and a doped waveguide layer which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer.

Abstract: A method for reducing optical loss in opto-electronic devices includes passivating P-type dopant impurities formed within various cladding and contact layer films. The passivating species is atomic hydrogen produced by a hydrogen containing plasma. The atomic hydrogen complexes with P-type dopant impurities to form electrically neutral pairs which are void of free carriers. Absorption, and loss, of the optical wave is therefore suppressed as it propagates through the P-doped layers because of the reduced free carrier concentration in the P-doped layers.

Abstract: The invention is a semiconductor avalanche photodetector including an essentially undoped multiplication layer; a thin, undoped light absorbing layer; and a doped waveguide layer which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer.

Abstract: The invention is a semiconductor avalanche photodetector including an essentially undoped multiplication layer; a thin, undoped light absorbing layer; and a doped waveguide layer which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer.

Abstract: A bond pad having reduced capacitance is disclosed which is useful in fabricating integrated circuit and communications devices. The bond pad is disposed within a select bond pad area and comprises a ribbon of conductive material within the select pad area and a two-phased region of air and conductive material. Also, at least one interconnect area is disposed within the bond pad area. The ribbon is coupled to the two-phased region, and the interconnect is coupled to the ribbon and to the device. Inclusion of air within the bond pad structure reduces the capacitance of the device, while the surface area of the bonding pad is maintained to at least substantially retain the adhesive properties of the pad.

Abstract: A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH4/H2 etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

Abstract: An arrangement for providing attachment and alignment between an array of surface emitting lasers and an array of optical fibers utilizes a first substrate for supporting the laser array and a second substrate for supporting the fibers. The second substrate is formed to including a plurality of apertures that are disposed to self-align with the laser array upon attachment. Alignment fiducials may be formed on both substrates to facilitate the alignment.