Abstract: An anisotropic etching processing for fabricating a solid state device which consists of the steps of providing a layer of silicon on the substrate and depositing a layer of molysilicide on the silicon layer. The molysilicide layer is then masked to define a pattern thereon. The unmasked portions of the molysilicide layer is then etched using a plasma etch gas mixture consisting essentially of CF.sub.4, C.sub.2 F.sub.6, O.sub.2 in the approximate ratio 50:5:2 in percent by volume. Etching through polysilicon is performed anisotropically using a plasma etch gas mixture consisting essentially of CCl.sub.2 F.sub.2 and C.sub.2 F.sub.6 in approximately the ratio 10:1 in percent by volume.

Abstract: A new magnetic microwave composite, a smooth monocrystalline substituted lithium ferrite (Li.sub.1-x Na.sub.x Fe.sub.5 O.sub.8) film on a monocrystalline magnesium oxide substrate is disclosed. Lithium ferrite films may be epitaxially grown on magnesium oxide substrates with excellent lattice matching by partial substitution of sodium for the lithium to increase the lattice constant of the lithium ferrite to match that of magnesium oxide.