Abstract: Some implementations herein describe a carrier structure and techniques of forming a semiconductor device using the carrier structure. The carrier structure includes a core layer formed from a layer of a high bandgap material, a backside layer stack formed on a backside surface of the layer of the high bandgap material, and a frontside layer stack formed on a frontside surface of the layer of the high bandgap material. The backside layer stack includes a backside chucking layer (e.g., a layer of a polysilicon material) that intervenes between a backside diffusion barrier layer and a backside adhesion layer. The frontside layer stack includes a corresponding frontside diffusion barrier layer that interfaces directly with a corresponding frontside adhesion layer. A corresponding frontside chucking layer has been eliminated.

Abstract: Described herein are cyclic polymers, including ultrahigh-molar-mass (UHMM, >2 million Da) cyclic polymers. These cyclic polymers can be prepared via catalyst-mediated (e.g., superbase-mediated) ring-opening polymerization followed by macromolecular cyclization triggered by protic quenching. This proton-triggered linear-to-cyclic topological transformation enables selective, linear-polymer-like access to desired cyclic polymers, including those with UHMM surpassing 2 MDa and/or possessing a dispersity (Ð) of 1.4 or less. In addition, these methods can eliminate the need for stringent conditions such as high dilution to prevent or suppress linear polymer contaminants. These cyclic polymers can exhibit not only much enhanced thermostability and mechanical toughness, and can also be quantitatively recycled back to monomer under mild conditions.

Abstract: In some embodiments, a method for forming a semiconductor device is provided. The method includes etching a substrate to form a recess within a surface of the substrate. An epitaxial material is formed within the recess, a capping structure is formed on the epitaxial material, and a capping layer is formed onto the capping structure. The capping layer laterally extends past an outermost sidewall of the capping structure. Dopants are implanted into the epitaxial material. Implanting the dopants into the epitaxial material forms a first doped region having a first doping type and a second doped region having a second doping type.

Abstract: A method of controlling headphones having external microphone signal pass-through functionality may involve controlling a display to present a geometric shape on the display and receiving an indication of digit motion from a sensor system associated with the display. The sensor system may include a touch sensor system or a gesture sensor system. The indication may be an indication of a direction of digit motion relative to the display. The method may involve controlling the display to present a sequence of images indicating that the geometric shape either enlarges or contracts, depending on the direction of digit motion and changing a headphone transparency setting according to a current size of the geometric shape. The headphone transparency setting may correspond to an external microphone signal gain setting and/or a media signal gain setting of the headphones.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes an epitaxial structure disposed on a semiconductor substrate. A photodetector is disposed at least partially in the epitaxial structure. A first capping layer is disposed on the semiconductor substrate and covers the epitaxial structure. A second capping layer is disposed vertically between the first capping layer and the epitaxial structure. The first capping layer extends laterally past outermost sidewalls of the epitaxial structure and the second capping layer.

Abstract: Some implementations herein describe a carrier structure and techniques of forming a semiconductor device using the carrier structure. The carrier structure includes a core layer formed from a layer of a high bandgap material, a backside layer stack formed on a backside surface of the layer of the high bandgap material, and a frontside layer stack formed on a frontside surface of the layer of the high bandgap material. The backside layer stack includes a backside chucking layer (e.g., a layer of a polysilicon material) that intervenes between a backside diffusion barrier layer and a backside adhesion layer. The frontside layer stack includes a corresponding frontside diffusion barrier layer that interfaces directly with a corresponding frontside adhesion layer. A corresponding frontside chucking layer has been eliminated.

Abstract: Some implementations described herein provide a temporary carrier structure and techniques to form a semiconductor device on the temporary carrier structure. The temporary carrier structure includes a core layer formed from a material having a first bandgap lattice constant. The temporary carrier structure further includes a debonding layer formed from another material having a second bandgap energy constant that is lesser relative to the first bandgap lattice constant. Techniques to form the semiconductor device including a forming substrate layer of the semiconductor device on the temporary carrier structure, where a material of the substrate layer and the material of the core layer have a same approximate coefficient of thermal expansion. The techniques further include providing energy (e.g., electromagnetic waves from a laser source) to the debonding layer to remove the core layer from the temporary carrier structure.

Abstract: In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.

Abstract: A method of controlling headphones having external microphone signal pass-through functionality may involve controlling a display to present a geometric shape on the display and receiving an indication of digit motion from a sensor system associated with the display. The sensor system may include a touch sensor system or a gesture sensor system. The indication may be an indication of a direction of digit motion relative to the display. The method may involve controlling the display to present a sequence of images indicating that the geometric shape either enlarges or contracts, depending on the direction of digit motion and changing a headphone transparency setting according to a current size of the geometric shape. The headphone transparency setting may correspond to an external microphone signal gain setting and/or a media signal gain setting of the headphones.

Abstract: Syndio-rich P3HB (sr-P3HB), readily synthesized from the eight-membered meso-dimethyl diolide, has a unique set of stereomicrostructures comprising enriched syndiotactic [rr] and no isotactic [mm] triads but abundant stereo-defects randomly distributed along the chain. This sr-P3HB material is characterized by high toughness (UT=96 MJ/m3), as a result of its high elongation at break (>400%) and tensile strength (34 MPa), crystallinity (Tm=114° C.), and optical clarity (due to its sub-micron spherulites), and good barrier properties, while it still biodegrades in freshwater and soil. On the other hand, iso-rich P3HB (ir-P3HB) can be synthesized from the eight-membered rac-dimethyl diolide. While sr-P3HB exhibits excellent adhesion strength toward a variety of substrates, both sr-P3HB and ir-P3HB can substantially toughen brittle stereoperfect biological or synthetic P3HB. Both sr-P3HB and ir-P3HB can also be obtained from the four-membered rac-beta-butyrolactone with appropriate catalysts.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes an epitaxial structure having a group IV chemical element disposed in a semiconductor substrate, where the epitaxial structure extends into the semiconductor substrate from a first side of the semiconductor substrate. A photodetector is at least partially arranged in the epitaxial structure. A first capping structure having a first capping structure chemical element that is different than the first group IV chemical element covers the epitaxial structure on the first side of the semiconductor substrate. A second capping structure is arranged between the first capping structure and the epitaxial structure, where the second capping structure includes the group IV chemical element and the first capping structure chemical element.

Abstract: In some embodiments, a method for forming a semiconductor device is provided. The method includes etching a substrate to form a recess within a surface of the substrate. An epitaxial material is formed within the recess, a capping structure is formed on the epitaxial material, and a capping layer is formed onto the capping structure. The capping layer laterally extends past an outermost sidewall of the capping structure. Dopants are implanted into the epitaxial material. Implanting the dopants into the epitaxial material forms a first doped region having a first doping type and a second doped region having a second doping type.

Abstract: A surgical sheath adapted for use in the nasal cavity has an elongated hollow body made of a braided material having interstitial spaces with a dimension of 0.25 mm to 1.50 mm. The interstitial spaces filled with a filling material, such as silicone. The sheath has a low profile configuration during placement into the naris, and may be stretched into an expanded configuration. In methods of placing the sheath in the naris, the sheath is folded and then pulled into the naris using a surgical tool.

Abstract: A surgical sheath adapted for use in the nasal cavity has an elongated hollow body made of a braided material having interstitial spaces with a dimension of 0.25 mm to 1.50 mm. The interstitial spaces filled with a filling material, such as silicone. The sheath has a low profile configuration during placement into the naris, and may be stretched into an expanded configuration. In methods of placing the sheath in the naris, the sheath is folded and then pulled into the naris using a surgical tool.

Abstract: In a surgical method, an access sheath is provided by a tube of a braided material. A first end of the sheath may be folded. The first end, folded or unfolded, is grasped with a distal end of a tool, which is then inserted into the nose of a patient. Advancing the tool pulls the distal end of the sheath into the nose of the patient. The sheath is then released from the tool and the tool is withdrawn. A portion of the sheath may be optionally cut off to shorten the sheath to a desired length. Typically the sheath has a total length of 70 to 180 mm and an outside diameter of 12 to 50 mm. The sheath may have a constant outside diameter along its length. The sheath may comprise silicone on the braided material.

Abstract: A method of controlling headphones having external microphone signal pass-through functionality may involve controlling a display to present a geometric shape on the display and receiving an indication of digit motion from a sensor system associated with the display. The sensor system may include a touch sensor system or a gesture sensor system. The indication may be an indication of a direction of digit motion relative to the display. The method may involve controlling the display to present a sequence of images indicating that the geometric shape either enlarges or contracts, depending on the direction of digit motion and changing a headphone transparency setting according to a current size of the geometric shape. The headphone transparency setting may correspond to an external microphone signal gain setting and/or a media signal gain setting of the headphones.

Abstract: In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.

Abstract: Methods, systems, and computer readable storage media are disclosed for generating joint-probabilistic ensemble forecasts for future events based on a plurality of different prediction models for the future events. For example, in one or more embodiments the disclosed system determines error values for various predictions from a plurality of different prediction models (i.e., “forecasters”) for previous events. Moreover, in one or more embodiments the system generates an error probability density function by mapping the error values to an error space and applying a kernel density estimation. Furthermore, the system can apply the error probability density function(s) to a plurality of predictions from the forecasters for a future event to generate a likelihood function and a new prediction for the future event.