Patents by Inventor Eugene Chen

Eugene Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210315963
    Abstract: The present disclosure provides a method of treating NAFLD, NASH, and atherosclerosis, comprising administering glycine-containing tripeptide molecule, or a pharmaceutically acceptable salt thereof to a subject.
    Type: Application
    Filed: August 9, 2019
    Publication date: October 14, 2021
    Applicants: DIAPIN THERAPEUTICS, LLC, THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Oren ROM, Jifeng ZHANG, Ying ZHAO, Yuquing Eugene CHEN
  • Patent number: 11145993
    Abstract: An antenna module and a terminal applying the antenna module are disclosed. The antenna module includes an antenna array configured with a plurality of antenna units and a radio-frequency phase shifting system. The antenna array and the radio-frequency phase shifting system are integrated on a circuit substrate to form an independent module. Further, the antenna unit of the antenna module may adopt a solution of a microstrip patch antenna structure loading a short-circuit pillar to generate multiple resonances, thereby expanding the bandwidth of the antenna unit. After the antenna array is formed, the antenna modules may be further arranged perpendicular to each other to expand and achieve large-angle scanning and polarization diversity functions. The disclosed antenna module has a simplified structure and may be applied to 5G communication. It has the advantages of easy system integration, low-profile miniaturization, wide radiation bandwidth, and large-angle scanning.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: October 12, 2021
    Assignees: ELECTRIC CONNECTOR TECHNOLOGY CO., LTD., SHANGHAI UNIVERSITY
    Inventors: Guangli Yang, Yuanqing Chen, Yong Luo, Jiayou Xu, Zefeng Jiang, Xiang Zhang, Yingjie Zhang, Eugene Yu-Jiun Ren
  • Publication number: 20210301272
    Abstract: Provided herein is technology relating to molecular biological manipulation of genes and genomes and particularly, but not exclusively, to CRISPR (Clustered Regularly Interspaced Short Palindromic Repeats) methods, compositions, systems, and kits for improved genetic editing.
    Type: Application
    Filed: May 6, 2019
    Publication date: September 30, 2021
    Inventors: Jie Xu, Jifeng Zhang, Yuqing Eugene Chen, Dongshan Yang
  • Publication number: 20210292212
    Abstract: Methods for making a glass article are described that include flowing molten glass through a metallic vessel, and supplying alternating electrical currents to multiple electrical circuits, each electrical circuit including a power supply, a pair of adjacent electrical flanges connected to the power supply, and a portion of the metallic vessel extending between and in electrical communication with the pair of adjacent flanges. At least two adjacent electrical circuits of the multiple electrical circuits share an electrical flange that is a common electrical path for the two adjacent electrical circuits, the two adjacent electrical circuits being supplied with alternating electrical currents, wherein at least one of the electrical currents is cut by a phase-fired controller.
    Type: Application
    Filed: July 11, 2019
    Publication date: September 23, 2021
    Inventors: Ying Pin Chen, Megan Aurora DeLamielleure, Dennis Eugene Hay, Chunhong Chelsie He
  • Patent number: 11039735
    Abstract: A surgical sheath for use in endoscopic trans-nasal or intra-ocular surgery is made of a braid material. The sheath may be manufactured by placing a length of braided tube material over a mandrel. The braid material is conformed to the shape of the mandrel and is then heat set. An atraumatic end may be made by folding or rolling one or both ends of the sheath. A coating may also optionally be applied to the braid material. The sheath reduces collateral trauma to the tissues in the surgical pathway.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: June 22, 2021
    Assignee: SPIWAY LLC
    Inventors: Eugene Chen, Richard C. Ewers, Cang Lam, Stephanie Frimond
  • Publication number: 20210137364
    Abstract: A surgical sheath adapted for use in the nasal cavity has an elongated hollow body made of a braided material having interstitial spaces with a dimension of 0.25 mm to 1.50 mm. The interstitial spaces filled with a filling material, such as silicone. The sheath has a low profile configuration during placement into the naris, and may be stretched into an expanded configuration. In methods of placing the sheath in the naris, the sheath is folded and then pulled into the naris using a surgical tool.
    Type: Application
    Filed: January 19, 2021
    Publication date: May 13, 2021
    Inventors: Eugene Chen, Richard C. Ewers, Cang Lam, Stephanie Frimond
  • Patent number: 10986984
    Abstract: A surgical sheath adapted for use in the nasal cavity has an elongated hollow body made of a braided material having interstitial spaces with a dimension of 0.25 mm to 1.50 mm. The interstitial spaces filled with a filling material, such as silicone. The sheath has a low profile configuration during placement into the naris, and may be stretched into an expanded configuration. In methods of placing the sheath in the naris, the sheath is folded and then pulled into the naris using a surgical tool.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: April 27, 2021
    Assignee: SPIWAY LLC
    Inventors: Eugene Chen, Richard C. Ewers, Cang Lam, Stephanie Frimond
  • Publication number: 20210082866
    Abstract: In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 18, 2021
    Inventors: Chen Yu Chen, Ming Chyi Liu, Eugene Chen
  • Publication number: 20210074755
    Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes an epitaxial structure having a group IV chemical element disposed in a semiconductor substrate, where the epitaxial structure extends into the semiconductor substrate from a first side of the semiconductor substrate. A photodetector is at least partially arranged in the epitaxial structure. A first capping structure having a first capping structure chemical element that is different than the first group IV chemical element covers the epitaxial structure on the first side of the semiconductor substrate. A second capping structure is arranged between the first capping structure and the epitaxial structure, where the second capping structure includes the group IV chemical element and the first capping structure chemical element.
    Type: Application
    Filed: November 19, 2020
    Publication date: March 11, 2021
    Inventors: Po-Chun Liu, Chung-Yi Yu, Eugene Chen
  • Publication number: 20210074551
    Abstract: In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.
    Type: Application
    Filed: September 11, 2019
    Publication date: March 11, 2021
    Inventors: Yu-Hung Cheng, Cheng-Ta Wu, Chen-Hao Chiang, Alexander Kalnitsky, Yeur-Luen Tu, Eugene Chen
  • Patent number: 10861896
    Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes an epitaxial structure having a group IV chemical element disposed in a semiconductor substrate, where the epitaxial structure extends into the semiconductor substrate from a first side of the semiconductor substrate. A photodetector is at least partially arranged in the epitaxial structure. A first capping structure having a first capping structure chemical element that is different than the first group IV chemical element covers the epitaxial structure on the first side of the semiconductor substrate. A second capping structure is arranged between the first capping structure and the epitaxial structure, where the second capping structure includes the group IV chemical element and the first capping structure chemical element.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Chun Liu, Chung-Yi Yu, Eugene Chen
  • Patent number: 10762676
    Abstract: A method for proactively creating an image product includes capturing an image of an object in a first environment by a device, storing a library of personalized products each characterized by a product type, automatically recognizing the object in the image as having a product type associated with the library of personalized products, automatically creating a design for the personalized product of the product type using personalized content, automatically displaying the design of the personalized product of the product type incorporating the selected photo in the first environment on the device, and manufacturing a physical product based on the design of the personalized product.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: September 1, 2020
    Assignee: Shutterfly, LLC
    Inventors: Eugene Chen, Preeti Nathan, Trynne Anne Miller, Wiley H. Wang, Shay Litvak, Marco Santini, Chris M. Denend, Abhishek KiranKumar Sabbarwal, David Le, Ira Blas, Ryan Lee
  • Patent number: 10747806
    Abstract: A method for proactively creating an image product includes capturing an image of an object in a first environment by a device, storing a library of personalized products each characterized by a product type, automatically recognizing the object in the image as having a product type associated with the library of personalized products, automatically creating a design for the personalized product of the product type using personalized content, automatically displaying the design of the personalized product of the product type incorporating the selected photo in the first environment on the device, and manufacturing a physical product based on the design of the personalized product.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: August 18, 2020
    Assignee: Shutterfly, LLC
    Inventors: Mark Levin, Preeti Nathan, Trynne Anne Miller, Wiley H. Wang, Shay Litvak, Marco Santini, Chris M. Denend, Eugene Chen, Vyacheslav Imeshev
  • Publication number: 20200227369
    Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.
    Type: Application
    Filed: March 25, 2020
    Publication date: July 16, 2020
    Inventors: Jhih-Bin Chen, Chia-Shiung Tsai, Ming Chyi Liu, Eugene Chen
  • Patent number: 10675114
    Abstract: A surgical sheath system for performing surgery of the head includes a flexible tubular braided sheath which is radially expandable. An expansion tube is insertable into the sheath to radially expand the sheath. A locking assembly includes tube position shift means, such as a cap threaded onto a flange, with a washer contained in a recess in the flange, the recess having an inside diameter greater than an outside diameter of the washer. When unlocked, the expansion tube can be shift horizontally, to access a different area of a surgical site, without moving the locking assembly. A stylet stabilizing assembly may be pivotally or releasably attached to the locking assembly.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: June 9, 2020
    Assignee: SPIWay LLC
    Inventors: Richard C. Ewers, Eugene Chen, Stephanie Frimond
  • Patent number: 10643964
    Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: May 5, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jhih-Bin Chen, Chia-Shiung Tsai, Ming Chyi Liu, Eugene Chen
  • Patent number: D903061
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: November 24, 2020
    Assignee: EKWB D.O.O.
    Inventors: Daniel George Harper, Eugene Chen, Pitt Chang
  • Patent number: D903062
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: November 24, 2020
    Assignee: EKWB D.O.O.
    Inventors: Daniel George Harper, Eugene Chen, Pitt Chang
  • Patent number: D903831
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: December 1, 2020
    Assignee: EKWB D.O.O.
    Inventors: Daniel George Harper, Eugene Chen, Pitt Chang
  • Patent number: D903832
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: December 1, 2020
    Assignee: EKWB D.O.O.
    Inventors: Daniel George Harper, Eugene Chen, Pitt Chang