Abstract: A method and apparatus for measuring registration between two or more integrated circuit layers is disclosed. Images of actual operative circuitry of different layers of a semiconductor wafer, obtained by optical or scanning electron microscopy, are digitized and analyzed for the relative placement of pattern shapes of the corresponding layers. This relative placement is then compared to a predetermined database and the registration calculated.

Abstract: A method and apparatus for measuring registration between two or more integrated circuit layers is disclosed. Images of actual operative circuitry of different layers of a semiconductor wafer, obtained by an optical technique or a scanning electron microscope, are digitized and analyzed for the relative placement of pattern shapes of the corresponding layers. This relative placement is then compared to tolerance values and if out of tolerance misregistration of the two layers is indicated.

Abstract: A method and apparatus for measuring registration between two or more integrated circuit layers is disclosed. Images of actual operative circuitry of different layers of a semiconductor wafer, obtained by an optical technique or a scanning electron microscope, are digitized and analyzed for the relative placement of pattern shapes of the corresponding layers. This relative placement is then compared to tolerance values and if out of tolerance misregistration of the two layers is indicated.

Abstract: The present invention is generally directed to various reticle writing methodologies to reduce write time, and a system for performing same. In one illustrative embodiment, the method comprises exposing a layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, the first and second areas of the layer of photoresist overlapping one another in at least one region.

Abstract: A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.

Abstract: The present invention is generally directed to various reticle writing methodologies to reduce write time, and a system for performing same. In one illustrative embodiment, the method comprises exposing a layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, the first and second areas of the layer of photoresist overlapping one another in at least one region.

Abstract: A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.

Abstract: A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.

Abstract: A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.

Abstract: A multiple pass write method and a reticle made from the method are described. A reticle preform is provided including a transparent substrate, a metal layer, and a layer of a photoresist material. In a first write pass, a first portion of the photoresist material is exposed by an electron beam device. Then, in a second write pass, a second portion of the photoresist material is exposed. The first exposed portion is smaller or has finer dimensions than the second exposed portion. The exposed portions of photoresist material are removed, and the unexposed portions of photoresist serve as a mask. The uncovered portions of the conductive layer are etched. Further, the unexposed portions of the photoresist material are removed, creating a reticle through a multiple write pass strategy.

Abstract: A reticle for use in a wafer stepper of the type in which a lens projects the image of a mask to create a lithographically-defined pattern on a wafer. The reticle includes a plurality of parallel, opaque rectangles formed therein. The rectangles are uniform in size with the width of each rectangle bearing a ratio to the distance between adjacent rectangles of approximately 4:1.