Patents by Inventor Eugene F. Lyons

Eugene F. Lyons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
    Patent number: 7524710
    Abstract: A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: April 28, 2009
    Assignee: Peregrine Semiconductor Corporation
    Inventors: Anthony M. Miscione, George Imthurn, Eugene F. Lyons, Michael A. Stuber
  • Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
    Patent number: 7411250
    Abstract: A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: August 12, 2008
    Assignee: Peregrine Semiconductor Corporation
    Inventors: Anthony M. Miscione, George Imthurn, Eugene F. Lyons, Michael A. Stuber
  • Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
    Publication number: 20030173591
    Abstract: A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.
    Type: Application
    Filed: March 10, 2003
    Publication date: September 18, 2003
    Inventors: James S. Cable, Eugene F. Lyons, Michael A. Stuber, Mark L. Burgener
  • Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
    Patent number: 6531739
    Abstract: A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.
    Type: Grant
    Filed: April 5, 2001
    Date of Patent: March 11, 2003
    Assignee: Peregrine Semiconductor Corporation
    Inventors: James S. Cable, Eugene F. Lyons, Michael A. Stuber, Mark L. Burgener
  • Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
    Publication number: 20020171104
    Abstract: A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.
    Type: Application
    Filed: April 5, 2001
    Publication date: November 21, 2002
    Inventors: James S. Cable, Eugene F. Lyons, Michael A. Stuber, Mark L. Burgener