Patents by Inventor Eugene LYON

Eugene LYON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RADIATION-HARDENED SILICON-ON-INSULATOR CMOS DEVICE, AND METHOD OF MAKING THE SAME
    Publication number: 20080230837
    Abstract: A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.
    Type: Application
    Filed: June 6, 2008
    Publication date: September 25, 2008
    Applicant: PEREGRINE SEMICONDUCTOR CORPORATION
    Inventors: Anthony M. MISCIONE, George IMTHURN, Eugene LYON, Michael A. STUBER
  • Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
    Publication number: 20050006703
    Abstract: A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.
    Type: Application
    Filed: May 13, 2004
    Publication date: January 13, 2005
    Inventors: Anthony Miscione, George Imthurn, Eugene Lyons, Michael Stuber