Patents by Inventor Eugene R. Gifford

Eugene R. Gifford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cross diffusion barrier layer in polysilicon
    Patent number: 7214613
    Abstract: A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: May 8, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Chih-Chen Cho, Robert Burke, Anuradha Iyengar, Eugene R. Gifford
  • Cross diffusion barrier layer in polysilicon
    Patent number: 7166896
    Abstract: A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.
    Type: Grant
    Filed: August 26, 2002
    Date of Patent: January 23, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Chih-Chen Cho, Robert Burke, Anuradha Iyengar, Eugene R. Gifford
  • Cross diffusion barrier layer in polysilicon
    Publication number: 20040036119
    Abstract: A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.
    Type: Application
    Filed: August 26, 2002
    Publication date: February 26, 2004
    Inventors: Sanh D. Tang, Chih-Chen Cho, Robert Burke, Anuradha Iyengar, Eugene R. Gifford