Abstract: A parallel exposure electron beam lithography system for directly writing an integrated circuit pattern simultaneously at a plurality of locations on the surface of a resist-coated semiconductor wafer is disclosed.An electron source produces an electron beam which is used to illuminate an object aperture. A screen lens consisting of a multiplicity of holes breaks up the flood electron beam emanating from the object aperture into a multiplicity of beams in parallel and focuses them on a resist-coated substrate. Each hole in the screen lens acts like a small aperture lens when a positive potential is applied to the wafer with respect to the screen lens.A pair of octupole deflectors electronically control the angle with which the electron beam strikes the screen lens. This controls the deflection of the images beneath each of the screen lenses.

Abstract: A method of fabricating lens and aperture array plates in silicon using photo or electron beam lithographic patterning followed by indiffusion of boron and anisotropic silicon etching and assembling to form screen lenses is disclosed.

Abstract: A reregistration system for determining and positioning the location of a substrate target surface with respect to a plurality of charged particle beams used to directly write an integrated circuit pattern simultaneously at a plurality of locations on the substrate is disclosed.Reregistration is accomplished by scanning two or more of the charged particle beams over a corresponding number of reregistration fiducial marks on the substrate. The reregistration marks may consist of a material having a high atomic number or predefined topographical features. Electrons scattered from these marks are detected and converted to electrical signals. The temporal relationship between the scanning beams and the resultant electrical signals may then be used to determine substrate location.