Abstract: An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

Abstract: An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Methods and systems using a purge ring are particularly useful for purging and cleaning porogens from a UV curing chamber. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

Abstract: Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

Abstract: Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

Abstract: Consistent ultraviolet (UV) intensity for a semiconductor UV cure chamber is measured in-situ with a hot pedestal in vacuum by measuring reflected UV light from a calibration substrate at a UV detector mounted in the lamp assembly. The measurement apparatus includes a UV detector, a cover that protects the detector from UV light while not in use, and a mirror disposed between the chamber window and the UV detector. Measured UV intensity from the substrate reflection and from the mirror reflection help determine a course of maintenance action to maintain wafer-to-wafer uniformity.

Abstract: A single wafer cleaning chamber that includes a rotatable bracket that can place a wafer beneath an upper end of a catch cup during a wafer cleaning process, a gutter positioned above a wafer transfer slit; where the catch cup can mate with the gutter to create a gap, and with the upper end of the catch cup positioned at a height equal to or higher than the gutter.

Abstract: A single wafer cleaning chamber that includes a rotatable bracket that can place a wafer beneath an upper end of a catch cup during a wafer cleaning process, a gutter positioned above a wafer transfer slit; where the catch cup can mate with the gutter to create a gap, and with the upper end of the catch cup positioned at a height equal to or higher than the gutter.

Abstract: During a wafer process, fragments can break away from a wafer. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes in a rapid thermal process. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of an area adjacent the sensor probe. A processor analyzes the acquired image to determine whether a wafer fragment is present. One approach involves comparing the acquired image to a reference image taken in the absence of a wafer fragment quantifying the amount of deviation.

Abstract: An apparatus and method for thermally processing a substrate employs lift pin for supporting or contacting the substrate while conveying radiation from the substrate to a detector and/or processor through a hollow member. The lift pin comprises a contact member flexibly mounted on the hollow member to adjust to the angle of the substrate. By conforming the orientation of the contact member to the angle of the substrate, accurate detection and processing of the substrate may be performed.

Abstract: During a wafer process, fragments can break away from a wafer. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes in a rapid thermal process. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of an area adjacent the sensor probe. A processor analyzes the acquired image to determine whether a wafer fragment is present. One approach involves comparing the acquired image to a reference image taken in the absence of a wafer fragment quantifying the amount of deviation.

Abstract: An apparatus for processing substrates includes a chamber, a substrate transfer element for transferring a substrate to and from the chamber, and a substrate support for receiving and holding a substrate within the chamber. The apparatus also includes multiple pins positioned and configured to be received by respective holes in the chamber bottom and moveable between a retracted position and an extended position. A pin actuation system is provided for moving the pins between the retracted position and the extended position. The pin actuation system controls the velocity at which the pins move and varies the speed of the pins by accelerating or decelerating at particular points during the pin cycle. A reduction in the cycle time is facilitated by accelerating the lift pins to relatively high speeds and then slowing the pins down prior to their arrival at locations where the substrate or wafer may be damaged.