Abstract: A method for patterning a magnetic memory cell junction is provided herein, which includes etching exposed portions of a stack of layers to a level spaced above a tunneling barrier layer of the stack of layers. In addition, the method may include implanting dopants into exposed portions of the stack of layers. For example, the method may include oxidizing and/or nitriding the exposed portions of the stack of layers. In some embodiments, the steps of etching and implanting dopants may form an upper portion of the magnetic cell junction. Alternatively, the method may include alternating the steps of etching and implanting dopants throughout the thickness of the exposed portions of the stack of layers. In either case, the stack of layers may include a magnetic layer which includes a material adapted to prevent the introduction of dopants underlying the tunneling barrier layer during the step of implanting.

Abstract: An method of creating a physical layout of an integrated circuit. A schematic file (600) is mapped directly to a physical layout using the location of elements and routing of interconnections as specified in the schematic file (600). The method takes advantage of constraints on the schematic design to provide the layout file (675) quickly, without complex routing programs. Design rules violations are anticipated and corrected in some cases. In other cases, the design rule violations are annotated, if the designer intentionally placed them in the design.

Abstract: A method for patterning a magnetic memory cell junction is provided herein, which includes etching exposed portions of a stack of layers to a level spaced above a tunneling barrier layer of the stack of layers. In addition, the method may include implanting dopants into exposed portions of the stack of layers. For example, the method may include oxidizing and/or nitriding the exposed portions of the stack of layers. In some embodiments, the steps of etching and implanting dopants may form an upper portion of the magnetic cell junction. Alternatively, the method may include alternating the steps of etching and implanting dopants throughout the thickness of the exposed portions of the stack of layers. In either case, the stack of layers may include a magnetic layer which includes a material adapted to prevent the introduction of dopants underlying the tunneling barrier layer during the step of implanting.

Abstract: A supported catalyst composition comprising: A1) a mixture of aluminum containing Lewis acids of the formulas: [(—AlQ1—O—)z(—AlArf—O—)z′] and (Arfz″Al2Q16−z″)  where; Q1 independently each occurrence is C1-20 alkyl; Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; z is a number from 1 to 50; z′ is a number from 1 to 50; and z″ is an number from 0 to 6; or A2) a fluorohydrocarbyl-substituted alumoxane compound corresponding to the formula: R1—(AlR3O)m—R2,  wherein: R1 and R2 independently each occurrence is a C1-40 aliphatic or aromatic group or a fluorinated derivative thereof or R1 and R2 together form a covalent bond; R3 independently each occurrence is a monovalent, fluorinated organic group containing from 1 to 100 carbon atoms or R1, with the proviso that in at least one occurrence per molecule, R3 is a monovalent, fluorinated organic group containing from 1

Abstract: Dicationic or partially dicationic Group 4 metal compounds having utility has addition polymerization catalysts among other uses and a method of preparation.

Abstract: A circuit is provided herein, which is adapted to supply different current magnitudes along opposing directions of a conductive line. Such a circuit may be particularly beneficial in compensating for the effects of unintentional magnetic coupling within MRAM devices. In addition, a method is provided herein for configuring a device having a magnetic memory array, which receives a first current magnitude along one direction and a substantially different current magnitude along an opposite direction of the magnetic memory array. Furthermore, a method is provided herein which assigns tunable current magnitudes for write operations along conductive lines of a memory circuit. Such tunable writing currents advantageously increase the write selectivity of the memory circuit. More specifically, the tunable writing currents compensate for ferromagnetic and antiferromagnetic coupling within magnetic memory cells caused by uneven surface topology and non-zero total magnetic moments, respectively.

Abstract: A process for forming a composition useful as a catalyst for the polymerization of addition polymerizable monomers, the steps of the process comprising: a) contacting under exchange reaction conditions a tri(hydrocarbyl)aluminum compound with a tri(fluoroaryl)boron compound; and b) contacting the reaction product from step a) without recovery or isolation thereof, with a neutral Group 3-10 metal complex.

Abstract: Catalyst compositions useful for olefin polymerizations comprising a Group 3-10 metal complex and a compound corresponding to the formula: AlArfQ1Q2, or a dimer, adduct, or mixture thereof and further mixtures with aluminum compounds of the formula AlArf3, where: Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; Q1 is Arf or a C1-20 hydrocarbyl group, optionally substituted with one or more cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silylhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, further optionally, such substituents may be covalently linked with each other to form one or more fused rings or ring systems; and Q2 is an aryloxy, arylsulfide or di(hydrocarbyl)amido group, optionally substituted with one or more hydrocarbyl, cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsil

Abstract: Compositions comprising: A) an aluminum compound corresponding to the formula AlArf3, where Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; B) an aluminum compound corresponding to the formula: AlArfQ1Q2, or a dimer, adduct, or mixture thereof; where: Arf is as previously defined; Q1 is Arf or a C1-20 hydrocarbyl group, optionally substituted with one or more cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silylhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, further optionally, such substituents may be covalently linked with each other to form one or more fused rings or ring systems; and Q2 is an aryloxy, arylsulfide or di(hydrocarbyl)amido group, optionally substituted with one or more hydrocarbyl, cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl,

Abstract: A catalyst activator particularly adapted for use in the activation of metal complexes of metals of Group 3-10 for polymerization of ethylenically unsaturated polymerizable monomers, especially olefins, comprising: a compound corresponding to the formula: ArfzAl2Q16-z where; Q1 independently each occurrence is selected from C1-20 alkyl; Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; z is a number greater than 0 and less than 6, and the moiety: ArfzAl2Q16-z is an adduct of tri(fluoroarylaluminum) with from a sub-stoichiometric to a super-stoichiometric amount of a trialkylaluminum having from 1 to 20 carbons in each alkyl group.

Abstract: Catalyst compositions comprising 1) one or more bimetallic Group 3-6 or Lanthanide metal complexes corresponding to the formula:  wherein: M and M′ are independently Group 3, 4, 5, 6, or Lanthanide metals; L is a divalent group (or trivalent group if bound to Q) having up to 50 nonhydrogen atoms and containing an aromatic &pgr;-system through which the group is bound to M, said L also being bound to Z; L′ is a monovalent group or a divalent group (if bound to L″ or Q), or a trivalent group (if bound to both L″ and Q) having up to 50 nonhydrogen atoms and containing an aromatic &pgr;-system through which the group is bound to M′; L″ is a monovalent group or a divalent group (if bound to L′ or Q), or a trivalent group (if bound to both L′ and Q) having up to 50 nonhydrogen atoms and containing an aromatic &pgr;-system through which the group is bound to M′, or L″ is a moiety comprising boron or a member of Group 14 of the Pe

Abstract: Compositions comprising:

Abstract: A composition comprising a mixture of aluminum containing Lewis acids said mixture corresponding to the formula: (Arf3Al)(AlQ13)y(—AlQ2—O—)z where; Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; Q1 is C1-20 alkyl; Q2 is C1-20 hydrocarbyl, optionally substituted with one or more groups which independently each occurrence are hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, optionally, two or more Q2 groups may be covalently linked with each other to form one or more fused rings or ring systems; y is a number from 0 to 1.0; z is a number from 0.1 to 20; and the moieties (Arf3Al)(AlQ13)y may exist as discrete entities or dynamic exchange products.

Abstract: Compositions comprising: A) an aluminum compound corresponding to the formula AlArf3, where Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; B) an aluminum compound corresponding to the formula: AlArfQ1Q2, or a dimer, adduct, or mixture thereof; where: Arf is as previously defined; Q1 is Arf or a C1-20 hydrocarbyl group, optionally substituted with one or more cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silylhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, further optionally, such substituents may be covalently linked with each other to form one or more fused rings or ring systems; and Q2is an aryloxy, arylsulfide or di(hydrocarbyl)amido group, optionally substituted with one or more hydrocarbyl, cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, s

Abstract: Compounds corresponding to the formula: AlArfQ1Q2, or a dimer, adduct, or mixture thereof and further mixtures with aluminum compounds of the formula AlArf3, where: Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; Q1 is Af or a C1-20 hydrocarbyl group, optionally substituted with one or more cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silylhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, further optionally, such substituents may be covalently linked with each other to form one or more fused rings or ring systems; and Q2 is an aryloxy, arylsulfide or di(hydrocarbyl)amido group, optionally substituted with one or more hydrocarbyl, cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silylhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydroca

Abstract: An improved and novel fabrication method for a magnetic element, and more particularly its use in a magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44) are defined by transforming portions (42b) of a magnetic blanket layer into an insulative material. The magnetic blanket layer, which includes magnetic layers (40,42) and a non-magnetic layer (41) sandwiched by the magnetic layers, which are deposited on conductor layer (34). The insulative, or inactive, portions (42b) define and separate the plurality of memory elements (43, 44).

Abstract: Ansa bis(.mu.-substituted) Group 4 metal and aluminum compounds comprising a single Group 4 metal atom and two aluminum metal atoms corresponding to the formula: ##STR1## wherein: L' is a .pi.-bonded group,M is a Group 4 metal,Z is a divalent bridging group causing the complex to have an ansa structure,X independently each occurrence is a Lewis basic ligand group able to form a .mu.-bridging ligand group, and optionally the two X groups may be joined together, andA' independently each occurrence is an aluminum containing Lewis acid compound that forms an adduct with the metal complex by means of the .mu.

Abstract: The monoether adduct of a tri(fluoroaryl)aluminum compound is prepared by an exchange reaction between a trihydrocarbylaluminum compound and a tri(fluororaryl)borane compound in a hydrocarbon solvent in the presence of a C.sub.1-6 aliphatic ether in an amount from 0.9 to 1.0 moles per mole of aluminum.

Abstract: Ansa bis(.mu.-substituted) Group 4 metal and aluminum compounds comprising a single Group 4 metal atom and two aluminum metal atoms corresponding to the formula: ##STR1## wherein: L' is a .pi.-bonded group,M is a Group 4 metal,J is nitrogen or phosphorus;Z is a divalent bridging group causing the complex to have an ansa structure,R' is an inert monovalent ligand;r is one or two;X independently each occurrence is a Lewis basic ligand group able to form a .mu.-bridging ligand group, and optionally the two X groups may be joined together, andA' independently each occurrence is an aluminum containing Lewis acid compound that forms an adduct with the metal complex by means of the .mu.

Abstract: Disclosed is a process for preparing bridged Group 4 metal complexes containing a neutral diene ligand starting from the corresponding novel, metal diene containing complexes by reaction thereof with the divalent derivative of a bridged bidentate ligand compound. The novel, intermediate metal diene complexes, their formation from tetravalent metal salts and an integrated process combining both process steps are claimed.