Abstract: A sputtering target and a backing plate are diffusion-bonded with or without an insert or inserts interposed there-between so as to have a solid phase diffusion-bonded interface. The sputtering target substantially maintains its metallurgical characteristic and properties even though it has been diffusion-bonded to the backing plate. The solid-diffusion bonding of the target and backing plate, is achieved at a low temperature and pressure and results in interdiffusion of constituent atoms to attain high adhesion and bond strength without attendant deterioration or large deformation of the target material, while inhibiting the crystal growth in the target material. The bond undergoes no abrupt decrease in bond strength upon elevation of the service temperature. One hundred percent bonding is achieved with non-bonded portions such as pores left along the interface.

Abstract: The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32).

Abstract: A preferred sputter target assembly (10, 10?) comprises a target (12, 12?), a backing plate (14, 14?) bonded to the target (12, 12?) along an interface (22, 22?) and dielectric particles (20, 20?) between the target (12, 12?) and the backing plate (14, 14?). A preferred method for manufacturing the sputter target assembly (10, 10?) comprises the steps of providing the target (12, 12?) and the backing plate (14, 14?); distributing the dielectric particles (20, 20?) between mating surfaces (24, 26) of the target (12, 12?) and the backing plate (14, 14?), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12?) to the backing plate (14, 14?) along the mating surfaces (24, 26).

Abstract: The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.

Abstract: A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.

Abstract: The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of projections are formed in the harder member of the assembly. The assembly is bonded by conventional techniques around the peripheral assembly boundaries. The assembly is then pressure consolidated at low temperature so that the projections, circumscribed by the bonded zone, penetrate into the softer member promoting the formation of metal to metal cold diffusion type bonds.

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of male projections (8) are formed in one member (2) of the assembly with a plurality of corresponding female recesses (9) formed in the other member (4). The assembly is bonded by conventional techniques around the peripheral boundary (25) that surrounds the male and female portions (8,9). The assembly is then pressure consolidated at low temperature so that the projections (8), circumscribed by the bonded zone, are force fit into the female recesses (9).

Abstract: The present invention pertains to low temperature pressure consolidation methods which provide for bonding of target material (10) to the backing plate material (15) capable of withstanding the stresses imposed by high sputtering rates. The sputter target assemblies (5) in accordance with the present invention are preferably comprised of target materials (10) and backing plate materials (15) having dissimilar thermal expansion coefficients and incorporate internal cooling channels (20). In the preferred embodiment, the resulting bond and the formation of the cooling channels (20) are cooperative.

Abstract: The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32).

Abstract: A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.

Abstract: Sputter target, method of manufacture of same and sputter coating process using the target as a sputtering source are disclosed. The sputter target comprises an Me/Si multi-phase, consolidated blend wherein the Si component is present in a very small amount of about trace—0.99 mole Si:1 mole Me. Preferably, Me comprises one or more of Ta, Ti, Mo, or W. The targets are made from the requisite powders via HIP consolidation to provide densities of greater than 98 % of the theoretical density. The targets are especially useful in reactive cathodic sputtering systems employing N2 as the reactive gas to form amorphous Me/Si/N layers.

Abstract: Methods for making Cr-Me sputter targets wherein Me is a metal are disclosed. Preferably Me is a transition metal and most preferably is a member selected from the group consisting of Cu, Fe, and V. As a first step in the method, Cr and Me powder or crystals on the order of less than 100 mesh are provided. Preferably, the powders or crystals have a size of about 6-8 mesh. The Cr is present in a weight ratio amount of at least 50% Cr based upon the total combined weight of Cr and Me present. The Cr and Me components are then mechanically alloyed in a high energy ball mill or the like so as to provide an intimate mixture of powdered Cr-Me. The resulting powder is screened with, for example, a -20 -70 mesh screen, and then subjected to hot isostatic pressing (HIP) conditions to consolidate the powders at pressures of about 10,000 to 45,000 psi and temperatures of 800.degree. C. to 1500.degree. C. for about 1/4 to 5 hours.

Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are disclosed wherein a gallium containing solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a gallium or gallium alloy liquid component and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.

Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are available wherein a solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a low melting point metal component having a melting point of about 70.degree. C. or less and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.

Abstract: Methods for facilitating recycling of backing plates in bonded target/backing plate assemblies and structural assemblies for use in these methods are disclosed. The target and backing plate are joined by a solder paste material that may be applied to adjoining surfaces of the target and backing plate at low temperature. The paste solidifies to have a high decomposition temperature on the order of greater than 400.degree. C. Provision of a solder layer having a liquidus temperature of about 100.degree.-250.degree. C. between the backing plate and solder paste allows for easy target and backing plate separation and subsequent backing plate reusage.