Abstract: The invention relates to selective deposition of a nickel layer on a copper surface. The invention may be used in the production of electrically conductive areas for electronic circuits. Method for nickel deposition on the surface of copper comprises immersing an item, which surface is to be deposited with the nickel layer, into one or more baths, of which at least one contains a reducing agent and of which at least one is adapted for (electroless) plating of nickel. In order to extend the field of application and to obtain practically pure nickel coatings, said reducing agent comprises boronic or phosphoric compounds, comprising morpholine borane (C4H9BNO), or dimethylamine borane (C2H7BN), or sodium tetrahydroborate (NaBH4), or sodium hypophosphite (NaH2PO2) and said reducing agent directly or indirectly reduces insoluble copper (I) or copper (II) compounds on the copper surface. At least one of the mention baths comprises a ligand or mixture thereof.

Abstract: The present invention relates to a production of electro-conductive traces on the surface of polymeric articles using laser excitation for the areas to be metallised, followed by activation of the laser-treated areas with a metal salt solution, the article is later rinsed in distilled water, and the activated areas are metallised in the chemical plating bath. The aims of the invention are to produce cost-effective conductive traces of the circuits for the application in 3D moulded interconnect devices, to increase the quality of the circuit traces improving the selective metallization process. An irradiation dose and scanning parameters for the surface excitation are chosen experimentally, provided that a negative static charge appears on the surface of the laser-irradiated areas. The chosen parameters ensure that any surface degradation of the polymer is avoided.

Abstract: The present invention relates to a production of electro-conductive traces on the surface of polymeric articles using laser excitation for the areas to be metallised, followed by activation of the laser-treated areas with a metal salt solution, the article is later rinsed in distilled water, and the activated areas are metallised in the chemical plating bath. The aims of the invention are to produce cost-effective conductive traces of the circuits for the application in 3D moulded interconnect devices, to increase the quality of the circuit traces improving the selective metallization process. An irradiation dose and scanning parameters for the surface excitation are chosen experimentally, provided that a negative static charge appears on the surface of the laser-irradiated areas. The chosen parameters ensure that any surface degradation of the polymer is avoided.

Abstract: A solution for electroless deposition of platinum is provided. The solution comprises Co2+ ions, Pt4+ ions, and amine ligands. A ratio of Co2+ to Pt4+ ion is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

Abstract: A method for providing an electroless plating of a platinum containing layer is provided. A Ti3+ stabilization solution is provided. A Pt4+ stabilization solution is provided. A flow from the Ti3+ stabilization solution is combined with a flow from the Pt4+ stabilization solution and water to provide a diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution. A substrate is exposed to the diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution.

Abstract: A solution for electroless deposition of cobalt is provided. A reducing agent of Ti3+ ions is provided to the solution. Co2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of nickel is provided. A reducing agent of Ti3+ ion is provided to the solution. Ni2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of palladium is provided. A reducing agent of Co2+ or Ti3+ ions is provided to the solution. Pd2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of cobalt is provided. A reducing agent of Ti3+ ions is provided to the solution. Co2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of platinum is provided. The solution comprises Co2+ ions, Pt4+ ions, and amine ligands. A ratio of Co2+ to Pt4+ ion is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

Abstract: A method for providing an electroless plating of a platinum containing layer is provided. A Ti3+ stabilization solution is provided. A Pt4+ stabilization solution is provided. A flow from the Ti3+ stabilization solution is combined with a flow from the Pt4+ stabilization solution and water to provide a diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution. A substrate is exposed to the diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution.

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract: An electroless ruthenium plating solution is disclosed herein. The solution includes a ruthenium source, a polyamino polycarboxylic acid complexing agent, a reducing agent, a stabilizing agent, and a pH-modifying substance. A method of preparing an electroless ruthenium plating solution is also provided.

Abstract: A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Abstract: Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.