Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Abstract: A cognitive sensor and a method of operating the same. The cognitive sensor includes a sensor unit, which generates electric signals in response to outside stimulations; a signal processing unit, which generates sensed data regarding the outside stimulations by processing electric signals generated by the sensor unit; a cognitive circuit unit, which specifies an area of interest in the sensed data processed by the signal processing unit; and an output unit, which outputs the sensed data generated by the signal processing unit, wherein at least a portion of the sensed data output by the output unit is sensed data regarding the area of interest.

Abstract: A cognitive sensor and a method of operating the same. The cognitive sensor includes a sensor unit, which generates electric signals in response to outside stimulations; a signal processing unit, which generates sensed data regarding the outside stimulations by processing electric signals generated by the sensor unit; a cognitive circuit unit, which specifies an area of interest in the sensed data processed by the signal processing unit; and an output unit, which outputs the sensed data generated by the signal processing unit, wherein at least a portion of the sensed data output by the output unit is sensed data regarding the area of interest.

Abstract: Provided is a scanning probe microscope capable of precisely analyzing characteristics of samples having an overhang surface structure. The scanning probe microscope comprises a first probe, a first scanner changing a position of the first probe along a straight line, and a second scanner changing a position of a sample in a plane, wherein the straight line in which the position of the first probe is changed by using the first scanner is non-perpendicular to the plane in which the position of the sample is changed by using the second scanner.

Abstract: A scanning probe microscope tilts the scanning direction of a z-scanner by a precise amount and with high repeatability using a movable assembly that rotates the scanning direction of the z-scanner with respect to the sample plane. The movable assembly is moved along a curved guide and has grooves that engage with corresponding projections on a stationary frame to precisely position the movable assembly at predefined locations along the curved guide.

Abstract: Provided is a scanning probe microscope capable of precisely analyzing characteristics of samples having an overhang surface structure. The scanning probe microscope comprises a first probe, a first scanner changing a position of the first probe along a straight line, and a second scanner changing a position of a sample in a plane, wherein the straight line in which the position of the first probe is changed by using the first scanner is non-perpendicular to the plane in which the position of the sample is changed by using the second scanner.