Abstract: Methods of polishing an object layer and for manufacturing a non-volatile memory device that incorporates such a polished object layer using a specially formulated slurry composition are disclosed. The slurry compositions include a ceria abrasive, a nonionic surfactant having a hydrophilic-lipophilic balance (HLB) value in a range of about 12 to about 17, and water. The nonionic surfactant is selected such that it may be adsorbed onto a hydrophobic layer to protect the hydrophobic layer from the ceria abrasive during a polishing operation. The slurry compositions may have a relatively high polishing rate for a hydrophilic layer and at the same time a relatively low polishing rate for a hydrophobic layer. Thus, the slurry compositions may be applied during a process for polishing the hydrophilic layer using the hydrophobic layer as a polishing stop layer.

Abstract: A slurry composition, a method of polishing polysilicon layers using the slurry composition, and a method of manufacturing a semiconductor device using the same, wherein the slurry composition includes an abrasive in an amount of about 1 to about 20 percent by weight of the slurry composition, a non-ionic surfactant in an amount of about 0.005 to about 1 percent by weight of the slurry composition, and a solvent having a basic compound.