Patents by Inventor Eui Rang LEE

Eui Rang LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20230220241
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition includes a solvent; an abrasive agent containing silica modified with a silane compound having at least one nitrogen atom; and an alkylene oxide group-containing fluorine surfactant.
    Type: Application
    Filed: November 7, 2022
    Publication date: July 13, 2023
    Inventors: Tae Won PARK, Jin Gyo KIM, Ji Ho LEE, Eui Rang LEE, Dong Hyeon LEE
  • CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
    Patent number: 11560495
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: January 24, 2023
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Won Jung Kim, Yoon Young Koo, Tae Won Park, Eui Rang Lee, Jong Won Lee, Youn Jin Cho
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20220112401
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent; and an abrasive agent, wherein the abrasive agent includes silica modified with polyethyleneimine-derived aminosilane, and the composition has a pH of about 4 to about 7.
    Type: Application
    Filed: September 20, 2021
    Publication date: April 14, 2022
    Inventors: Won Jung KIM, Yoon Young KOO, Hyeong Mook KIM, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20220025214
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:
    Type: Application
    Filed: July 19, 2021
    Publication date: January 27, 2022
    Inventors: Eui Rang LEE, Yoon Young KOO, Won Jung KIM, Hyeong Mook KIM, Tae Won PARK, Jong Won LEE, Youn Jin CHO
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20210230451
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
    Type: Application
    Filed: January 22, 2021
    Publication date: July 29, 2021
    Inventors: Won Jung KIM, Yoon Young KOO, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO