Patents by Inventor Eui Rang LEE

Eui Rang LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP SLURRY COMPOSITION FOR POLISHING PATTERNED TUNGSTEN WAFER AND METHOD OF POLISHING PATTERNED TUNGSTEN WAFER USING THE SAME
    Publication number: 20260139154
    Abstract: Disclosed herein are a CMP slurry composition for polishing patterned tungsten wafers, and a method of polishing patterned tungsten wafers using the CMP slurry composition. The CMP slurry composition includes at least one of a polar solvent and a nonpolar solvent, an abrasive agent, and a catalyst. The catalyst includes a copper-containing catalyst, the copper-containing catalyst being a complex of a copper cation and a complexing agent having a charge of +1 or more at a pH in a range of 3 to 6.
    Type: Application
    Filed: November 12, 2025
    Publication date: May 21, 2026
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Ji Ho LEE, Ji Hye KIM, Jin Gyo KIM, Eui Rang LEE, Ji Won BAEK, A Reum JUNG, Jun Ho YUN, Eun Bi PARK, Min A KWON, Kun Bae NOH
  • CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
    Patent number: 12552962
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition includes a solvent; an abrasive agent containing silica modified with a silane compound having at least one nitrogen atom; and an alkylene oxide group-containing fluorine surfactant.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: February 17, 2026
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Tae Won Park, Jin Gyo Kim, Ji Ho Lee, Eui Rang Lee, Dong Hyeon Lee
  • CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
    Patent number: 12516220
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent; and an abrasive agent, wherein the abrasive agent includes silica modified with polyethyleneimine-derived aminosilane, and the composition has a pH of about 4 to about 7.
    Type: Grant
    Filed: September 20, 2021
    Date of Patent: January 6, 2026
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Won Jung Kim, Yoon Young Koo, Hyeong Mook Kim, Tae Won Park, Eui Rang Lee, Jong Won Lee, Youn Jin Cho
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN AND METHOD FOR POLISHING TUNGSTEN USING THE SAME
    Publication number: 20250223479
    Abstract: A CMP slurry composition for polishing tungsten and a method of polishing tungsten using the composition, the composition includes a solvent, the solvent comprising a polar solvent or a nonpolar solvent; an abrasive agent; and a corrosion inhibitor, wherein the corrosion inhibitor includes a polyaminosilane having a weight average molecular weight of 500 g/mol to 5,000 g/mol, or a salt thereof.
    Type: Application
    Filed: December 31, 2024
    Publication date: July 10, 2025
    Inventors: Eui Rang LEE, Kun Bae NOH, Tae Won PARK, Ji Ho LEE, Byung Chang OH, Ji won BAEK, A Reum JUNG, Keun Sam JANG
  • CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
    Patent number: 12139642
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: November 12, 2024
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Eui Rang Lee, Yoon Young Koo, Won Jung Kim, Hyeong Mook Kim, Tae Won Park, Jong Won Lee, Youn Jin Cho
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN AND METHOD OF POLISHING TUNGSTEN USING THE SAME
    Publication number: 20240174890
    Abstract: A CMP slurry composition for polishing tungsten and a method of polishing tungsten using the same, the composition includes a polar solvent or a nonpolar solvent; an abrasive agent; and a compound represented by Formula 3 or a complex thereof:
    Type: Application
    Filed: October 24, 2023
    Publication date: May 30, 2024
    Inventors: Keun Sam JANG, Won Jung KIM, Tae Won PARK, Ji Ho LEE, Eui Rang LEE, Jin Gyo KIM, Dong Hyeon LEE, Chang Suk LEE
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20230220241
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition includes a solvent; an abrasive agent containing silica modified with a silane compound having at least one nitrogen atom; and an alkylene oxide group-containing fluorine surfactant.
    Type: Application
    Filed: November 7, 2022
    Publication date: July 13, 2023
    Inventors: Tae Won PARK, Jin Gyo KIM, Ji Ho LEE, Eui Rang LEE, Dong Hyeon LEE
  • CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
    Patent number: 11560495
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: January 24, 2023
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Won Jung Kim, Yoon Young Koo, Tae Won Park, Eui Rang Lee, Jong Won Lee, Youn Jin Cho
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20220112401
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent; and an abrasive agent, wherein the abrasive agent includes silica modified with polyethyleneimine-derived aminosilane, and the composition has a pH of about 4 to about 7.
    Type: Application
    Filed: September 20, 2021
    Publication date: April 14, 2022
    Inventors: Won Jung KIM, Yoon Young KOO, Hyeong Mook KIM, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20220025214
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:
    Type: Application
    Filed: July 19, 2021
    Publication date: January 27, 2022
    Inventors: Eui Rang LEE, Yoon Young KOO, Won Jung KIM, Hyeong Mook KIM, Tae Won PARK, Jong Won LEE, Youn Jin CHO
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20210230451
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
    Type: Application
    Filed: January 22, 2021
    Publication date: July 29, 2021
    Inventors: Won Jung KIM, Yoon Young KOO, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO