Abstract: The apparatus includes a support unit to support the substrate in a treatment space of a process chamber, a first fluid supply unit to supply a supercritical fluid having an organic solvent dissolved in the supercritical fluid, to the treatment space, a second fluid supply unit to supply the supercritical fluid having no organic solvent dissolved in the supercritical fluid, to the treatment space, an exhaust unit to exhaust the treatment space, a controller to control the first fluid supply unit, the second fluid supply unit, and the exhaust unit. The controller controls the first and second fluid supply units such that the supercritical fluid having no organic solvent dissolved in the supercritical fluid is supplied to the treatment space through the second fluid supply unit, after the supercritical fluid mixed with the organic solvent is supplied to the treatment space through the first fluid supply unit.

Abstract: A substrate processing apparatus includes a chamber body providing a processing space for drying a substrate with a drying fluid in a supercritical state, a substrate support chuck supporting the substrate in the processing space, a fluid supply unit including a fluid supply line configured to supply the drying fluid to the processing space, and a supply line heating unit configured to heat the fluid supply line.

Abstract: Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

Abstract: Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

Abstract: A method for treating a substrate is provided. The method includes the following steps: performing a process of treating the substrate by dispensing a supercritical fluid onto the substrate. A treating fluid flows through a treating fluid supplying regulator regulating an amount of the treating fluid before dispensed onto the substrate. The treating fluid is heated to a set temperature or more by a first heater before passing through the treating fluid supplying regulator, and the treating fluid is heated by a second heater when the treating fluid is passed through the treating fluid supplying regulator. The temperature of the treating fluid is lowered in rear region of the treating fluid supplying regulator. The set temperature is a temperature that allows the lowered temperature to be maintained at a critical temperature or more.

Abstract: A substrate treating device includes a liquid treating chamber for liquid-treating a substrate therein, a drying chamber for dry-treating the liquid-treated substrate, a transfer device for transferring the substrate between the liquid treating chamber and the drying chamber, and a controller for controlling the liquid treating chamber and the transfer device. The transfer device includes a transfer robot having a hand for placing the substrate thereon, and a heating member for heating the substrate. The controller controls the transfer device such that the heating member of the transfer device heats a liquid on the substrate to a first temperature before the transfer device transfers the substrate taken out from the liquid treating chamber to the drying chamber.

Abstract: An apparatus for treating a substrate includes a body having an inner space in which the substrate is dried by a drying fluid in a supercritical state, a fluid supply unit that supplies the drying fluid into the inner space, a fluid exhaust unit that releases the drying fluid from the inner space, and a controller. The controller controls the fluid supply unit and the fluid exhaust unit to perform a pressure-raising step of raising pressure in the inner space to a set pressure and a flow step of generating a flow of the drying gas in the inner space by releasing, by the fluid exhaust unit, the drying fluid from the inner space while the fluid supply unit supplies the drying fluid into the inner space.

Abstract: An apparatus for treating a substrate using a treating fluid in a supercritical state is provided. In a pressure increasing step of increasing a pressure in the treating space from a pressure lower than a critical pressure of the treating fluid to a treating pressure higher than the critical pressure, the apparatus controls a supply amount of the treating fluid supplied from a first supply port to control flow of the treating fluid supplied from the first supply port and then exhausted through an exhaust port.

Abstract: Disclosed is a method for liquid-treating a substrate. In a method for treating a substrate, the substrate may be treated by supplying a treatment liquid onto the rotating substrate by using a first nozzle and a second nozzle, the first nozzle supplies the treatment liquid to an area including a central area on the substrate, and the second nozzle supplies the treatment liquid to a peripheral area of the substrate.

Abstract: A substrate treating apparatus is disclosed. The apparatus may include a housing including an upper body and a lower body coupled to each other to define a treatment space, the lower body being provided below the upper body, a supporting unit coupled to the upper body, the supporting unit supporting an edge of a substrate disposed in the treatment space, a fluid supplying unit configured to supply fluid into the treatment space, a sealing member provided between and in contact with the upper and lower bodies, the sealing member hermetically isolating the treatment space from an outer space, and an isolation plate installed between the sealing member and the supporting unit. The isolation plate may be provided to face the sealing member.

Abstract: The apparatus includes a support unit to support the substrate in a treatment space of a process chamber, a first fluid supply unit to supply a supercritical fluid having an organic solvent dissolved in the supercritical fluid, to the treatment space, a second fluid supply unit to supply the supercritical fluid having no organic solvent dissolved in the supercritical fluid, to the treatment space, an exhaust unit to exhaust the treatment space, a controller to control the first fluid supply unit, the second fluid supply unit, and the exhaust unit. The controller controls the first and second fluid supply units such that the supercritical fluid having no organic solvent dissolved in the supercritical fluid is supplied to the treatment space through the second fluid supply unit, after the supercritical fluid mixed with the organic solvent is supplied to the treatment space through the first fluid supply unit.

Abstract: Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

Abstract: Disclosed is a method for liquid-treating a substrate. In a method for treating a substrate, the substrate may be treated by supplying a treatment liquid onto the rotating substrate by using a first nozzle and a second nozzle, the first nozzle supplies the treatment liquid to an area including a central area on the substrate, and the second nozzle supplies the treatment liquid to a peripheral area of the substrate.

Abstract: A substrate treating apparatus is disclosed. The apparatus may include a housing including an upper body and a lower body coupled to each other to define a treatment space, the lower body being provided below the upper body, a supporting unit coupled to the upper body, the supporting unit supporting an edge of a substrate disposed in the treatment space, a fluid supplying unit configured to supply fluid into the treatment space, a sealing member provided between and in contact with the upper and lower bodies, the sealing member hermetically isolating the treatment space from an outer space, and an isolation plate installed between the sealing member and the supporting unit. The isolation plate may be provided to face the sealing member.

Abstract: An apparatus for treating a substrate comprises a chamber having a processing space in which a process of treating the substrate is performed and a fluid supply unit that supplies a treating fluid into the chamber. The fluid supply unit comprises a supply line, at least one orifice provided in the supply line, and a first heater provided on the orifice or upstream of the orifice. The first heater heats the treating fluid passing through the orifice to a set temperature or more.

Abstract: Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

Abstract: A method for treating a substrate, in which a supercritical fluid is supplied into a chamber, in which the substrate is carried, to treat the substrate, the method including a supply step of supplying the supercritical fluid into the chamber until a pressure of the interior of the chamber reaches a preset pressure, and a substrate treating step of performing a supercritical process while repeating supply and exhaust of the supercritical fluid into and out of the interior of the chamber after the supply step, wherein a flow rate of the supercritical fluid supplied into the chamber in the supply step is variable.

Abstract: A method for treating a substrate, in which a supercritical fluid is supplied into a chamber, in which the substrate is carried, to treat the substrate, the method including a supply step of supplying the supercritical fluid into the chamber until a pressure of the interior of the chamber reaches a preset pressure, and a substrate treating step of performing a supercritical process while repeating supply and exhaust of the supercritical fluid into and out of the interior of the chamber after the supply step, wherein a flow rate of the supercritical fluid supplied into the chamber in the supply step is variable.

Abstract: Disclosed is a method for liquid-treating a substrate. In a method for treating a substrate, the substrate may be treated by supplying a treatment liquid onto the rotating substrate by using a first nozzle and a second nozzle, the first nozzle supplies the treatment liquid to an area including a central area on the substrate, and the second nozzle supplies the treatment liquid to a peripheral area of the substrate.

Abstract: Disclosed are systems and methods for treating a substrate. The method may include supplying supercritical carbon dioxide into a chamber to treat a substrate. Here, temperature and pressure of the chamber is maintained to allow carbon dioxide to be directly changed from a gas state to a supercritical state when the carbon dioxide is supplied into the chamber.