Abstract: The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an exemplary embodiment comprises a photoconductive substrate; and a plurality of terahertz wave generating unit elements arranged in a two-dimensional array on the photoconductive substrate. Also, the terahertz wave generating unit elements comprise a plurality of first electrodes arranged in the two-dimensional array on the photoconductive substrate and respectively connected to a plurality of first electrode pads, and at least one second electrode formed on the photoconductive substrate so as to face the first electrodes.

Abstract: Disclosed is a photo diode. The photo diode includes: at least two branched waveguides configured to receive beating signals; absorbing layers disposed in vertical directions to the waveguides, and disposed while being spaced apart from distal ends of the waveguides by a predetermined interval; and one or more intermediate layers formed based on the distal ends of the waveguides and disposed with the absorbing layers at upper end of the one or more intermediate layers.

Abstract: Disclosed is a photo diode. The photo diode includes: at least two branched waveguides configured to receive beating signals; absorbing layers disposed in vertical directions to the waveguides, and disposed while being spaced apart from distal ends of the waveguides by a predetermined interval; and one or more intermediate layers formed based on the distal ends of the waveguides and disposed with the absorbing layers at upper end of the one or more intermediate layers.

Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.

Abstract: A terahertz band filter for filtering, in a frequency band, a terahertz wave propagating between a pair of metal plates with an upper parallel surface facing a lower parallel surface includes a sheet parallel to the upper and lower parallel surfaces, which is disposed between the metal plates and is spaced apart therefrom, and at least one slit located in the sheet to face the upper and lower parallel surfaces, wherein the sheet comprises a single slit to function as a notch filter for blocking in a specific frequency band.

Abstract: A terahertz band filter for filtering, in a frequency band, a terahertz wave propagating between a pair of metal plates with an upper parallel surface facing a lower parallel surface includes a sheet parallel to the upper and lower parallel surfaces, which is disposed between the metal plates and is spaced apart therefrom, and at least one slit located in the sheet to face the upper and lower parallel surfaces, wherein the sheet comprises a single slit to function as a notch filter for blocking in a specific frequency band.