Abstract: A sulfur-carbon composite including a porous carbon material; and sulfur coated on at least a portion of an inside and a surface of the porous carbon material, wherein a pore volume of the sulfur-carbon composite is 0.04 to 0.400 cm3/g and a specific surface area of the sulfur-carbon composite is 4.0 to 30 m2/g, and a method for preparing the same.

Abstract: A sulfur-carbon composite including porous carbon material, and sulfur, wherein at least a portion of an inside and a surface of the porous carbon material coated with the sulfur, the sulfur-carbon composite has a pore volume of 0.180 cm3/g to 0.300 cm3/g, and the sulfur-carbon composite has an average pore size of 40.0 nm to 70.0 nm, and a method of manufacturing the same. Also, a method of manufacturing a sulfur-carbon composite, which includes (a) mixing a porous carbon material with sulfur particles, wherein the sulfur particles have a particle size of 1 nm to 1 ?m using a Henschel mixer; and (b) drying the resulting mixture of (a).

Abstract: This disclosure provides a display panel including a first substrate with pixel areas and emission areas defined by a plurality of gate lines and a plurality of data lines; and a second substrate on which partitions are formed to correspond with the emission areas. The present disclosure provides a method for improving luminance efficiency of a display device having a mirror or transmittance function.

Abstract: Provided is a display device. A poly-Si layer is disposed on a substrate. A first metal layer is disposed on the poly-Si layer, and a metal oxide layer is disposed on the first metal layer. A second metal layer is disposed on the metal oxide layer. The first metal layer is overlapped with the second metal layer. The first metal layer and the second metal layer may be gate lines connected to different TFTs.

Abstract: Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.

Abstract: Provided is a display device. A poly-Si layer is disposed on a substrate. A first metal layer is disposed on the poly-Si layer, and a metal oxide layer is disposed on the first metal layer. A second metal layer is disposed on the metal oxide layer. The first metal layer is overlapped with the second metal layer. The first metal layer and the second metal layer may be gate lines connected to different TFTs. Thus, in the display device, a plurality of gate lines may be disposed so as to be overlapped with each Oxide other. Therefore, an area occupied by a circuit part in the display device can be reduced. Accordingly, it is possible to manufacture a display device with higher resolution, a transparent display device with improved transmittance, and a display device with a reduced size of a non-display area.

Abstract: This disclosure provides a display panel including a first substrate with pixel areas and emission areas defined by a plurality of gate lines and a plurality of data lines; and a second substrate on which partitions are formed to correspond with the emission areas. The present disclosure provides a method for improving luminance efficiency of a display device having a mirror or transmittance function.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: An organic light emitting diode display device in accordance with various embodiments may include: a pixel region defined by a gate line and a data line and having an emitting area and a transparent area; at least one driving element disposed in the emitting area; a power line overlapping the emitting area and connected to the at least one driving element; a first capacitor electrode disposed in the emitting area and overlapping the power line, wherein the power line and the first capacitor electrode form a first storage capacitor; and a second capacitor electrode disposed in the emitting area and overlapping the first capacitor electrode, wherein the first capacitor electrode and the second capacitor electrode form a second storage capacitor.

Abstract: An array substrate includes: a substrate; first and second gate lines on the substrate; first and second common lines parallel to and spaced apart from the first and second gate lines; first and second data lines crossing the first and second gate lines and the first and second common lines; first and second thin film transistors in the pixel region; a first pixel electrode and a first common electrode alternately disposed in the first area, at least one of the first pixel electrode and the first common electrode having a bent part; and a second pixel electrode and a second common electrode alternately disposed in the second area.

Abstract: Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.

Abstract: An organic light emitting diode display device in accordance with various embodiments may include: a pixel region defined by a gate line and a data line and having an emitting area and a transparent area; at least one driving element disposed in the emitting area; a power line overlapping the emitting area and connected to the at least one driving element; a first capacitor electrode disposed in the emitting area and overlapping the power line, wherein the power line and the first capacitor electrode form a first storage capacitor; and a second capacitor electrode disposed in the emitting area and overlapping the first capacitor electrode, wherein the first capacitor electrode and the second capacitor electrode form a second storage capacitor.

Abstract: A liquid crystal display device includes: a liquid crystal panel including a pixel having red, green, blue and white sub-pixels; a mode selector selecting one from an RGB mode and an RGBW mode as a driving mode; an RGBW mode signal generating part performing a color correction on RGB input data corresponding to the pixel and converting the RGB input data into RGBW data in the RGBW mode; and an output controlling part outputting RGBW output data by performing a gamma conversion on the RGBW data in the RGBW mode and outputting the RGB input data and a W data for turning off the W sub-pixel as the RGBW output data in the RGB mode.

Abstract: A liquid crystal display (LCD) device includes: a plurality of gate lines; a plurality of data lines that cross the gate lines to define pixel regions; a plurality of thin film transistors at the crossings of the gate and data lines, the thin film transistors of vertically adjacent pixels each connected to a shared gate line of the plurality of gate lines and on opposite sides of the shared gate line; and a plurality of pixel electrodes in the pixel regions, wherein each pixel electrode of the plurality of pixel electrodes is formed in two horizontally-adjacent pixel regions.

Abstract: An array substrate includes: a substrate; first and second gate lines on the substrate; first and second common lines parallel to and spaced apart from the first and second gate lines; first and second data lines crossing the first and second gate lines and the first and second common lines; first and second thin film transistors in the pixel region; a first pixel electrode and a first common electrode alternately disposed in the first area, at least one of the first pixel electrode and the first common electrode having a bent part; and a second pixel electrode and a second common electrode alternately disposed in the second area.

Abstract: A system is discussed for displaying multivideo, which enables users to view a plurality of different video images at the same time through one video displaying system without lowering resolution. The system includes according to an embodiment a video processor for alternately outputting first and second images every predetermined number of frames according to a similarity between previous and present frames of first or second video image; and a display panel for displaying the video image outputted from the video processor.

Abstract: A digital gamma correction system for detecting a brightness of a liquid crystal panel, and correcting a gamma voltage, based on the detected brightness, includes an offset setter for setting the number of detection gray levels and a first detection area, for the detection of the brightness of the liquid crystal panel, a plurality of brightness detectors for detecting brightness values output from the first detection area for the detection gray levels, a controller for processing the brightness values detected by the brightness detectors, a non-linear interpolation data processor for processing a brightness value supplied from the controller, thereby generating non-linear interpolation data as a brightness variation rate according to the gray levels, a brightness corrector for generating gamma correction data for brightness values obtained by interpolating brightness values detected in a second detection area of another liquid crystal panel for a second number of detection gray levels, based on the non-linear