Abstract: This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semi

Abstract: A method for fabricating a thin film transistor, enabling an easy fabrication and an improvement in device characteristic by use of a self-alignment.

Abstract: A thin film transistor and a method of making the same, capable of reducing the step height between an insulating substrate and a gate electrode upon the anodization and thus preventing a short circuit at overlapping portions of the gate electrode and source/drain electrodes. The thin film transistor comprises a first metal layer as a gate electrode formed on an insulating substrate, an anodizable second metal layer having a line width larger than that of the first metal layer so as to cover the first metal layer, and an anodized film as a first gate insulating film formed by anodizing the second metal layer. The gate electrode and the anodized film serve as a gate insulating film.

Abstract: A thin film transistor and a method of making the same, capable of reducing the step height between an insulating substrate and a gate electrode upon the anodization and thus preventing a short circuit at overlapping portions of the gate electrode and source/drain electrodes. The thin film transistor comprises a first metal layer as a gate electrode formed on an insulating substrate, an anodizable second metal layer having a line width larger than that of the first metal layer so as to cover the first metal layer, and an anodized film as a first gate insulating film formed by anodizing the second metal layer. The gate electrode and the anodized film serve as a gate insulating film.