Patents by Inventor Eui-Yeol Kim

Eui-Yeol Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240072737
    Abstract: A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiving circuit includes a first transformer and processes one or more outputs of the first and second LNAs. The second receiving circuit processes one or more of the outputs of the first and second LNAs. The radio frequency multiplexer controls connection between the first and second LNAs and the first and second receiving circuits. The first receiving circuit includes a first variable capacitor having a first end connected to an output of the radio frequency multiplexer and a second end connected to the first transformer.
    Type: Application
    Filed: June 29, 2023
    Publication date: February 29, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jeong Yeol BAE, Jong Soo Lee, Duk Soo Kim, Eui Bong Yang
  • Publication number: 20140043896
    Abstract: A method of preventing program-disturbances for a non-volatile semiconductor memory device having a plurality of memory cells of which each includes a selection transistor and a memory transistor coupled in series between a bit-line and a common source-line is provided. First non-selected memory cells that share a first selection-line with a selected memory cell, and second non-selected memory cells that do not share the first selection-line with the selected memory cell are determined when the selected memory cell is selected to be programmed among the memory cells. A negative voltage is applied to second selection-lines that are coupled to the second non-selected memory cells when the selected memory cell is programmed by applying a positive voltage to the first selection-line that is coupled to the selected memory cell.
    Type: Application
    Filed: July 11, 2013
    Publication date: February 13, 2014
    Inventors: Weon-Ho Park, Hyok-Ki Kwon, Min-Sup Kim, Min-Su Kim, Byoung-Ho Kim, Eui-Yeol Kim, Sang-Hoon Park, Ji-Hoon Park, Min-Jee Sung, Hyo-Soung Sim, Chang-Min Jeon, Hee-Seog Jeon