Abstract: A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiving circuit includes a first transformer and processes one or more outputs of the first and second LNAs. The second receiving circuit processes one or more of the outputs of the first and second LNAs. The radio frequency multiplexer controls connection between the first and second LNAs and the first and second receiving circuits. The first receiving circuit includes a first variable capacitor having a first end connected to an output of the radio frequency multiplexer and a second end connected to the first transformer.

Abstract: A printed circuit board according to an embodiment includes a first insulating layer; a first circuit pattern disposed on a lower surface or inside the first insulating layer; a second circuit pattern disposed on an upper surface of the first insulating layer; a second insulating layer disposed on the upper surface of the first insulating layer and surrounding the second circuit pattern; and a protective layer disposed on an upper surface of the second insulating layer, wherein the second insulating layer has at least one recess formed on its upper surface, and wherein the protective layer is disposed in the recess formed on the upper surface of the second insulating layer.

Abstract: Provided are a ternary glass composition containing SiO2, B2O3 and ZnO, and a ceramic phosphor plate including a glass frit obtained by vitrification of the glass composition as a matrix and obtained by sintering at least one phosphor.

Abstract: Provided are a ternary glass composition containing SiO2, B2O3 and ZnO, and a ceramic phosphor plate including a glass frit obtained by vitrification of the glass composition as a matrix and obtained by sintering at least one phosphor.