Abstract: An X-ray imaging apparatus according to the disclosure guides the patient posture using a visual and/or audible interaction device during execution of an X-ray imaging procedure such as mammography, and provides the patient with information about the procedure during the procedure's execution, thereby improving the patient experience while reducing the workload of an operator. The X-ray imaging apparatus may include an X-ray tube, an X-ray detector, and an arm including an upper end within which the X-ray tube is disposed, and a lower end within which the X-ray detector is disposed. An illumination unit may be configured to provide an indication of a movement direction of the arm, responsive to a user input for moving the arm in the movement direction. A controller may control the illumination unit.

Abstract: An X-ray imaging apparatus according to the disclosure guides the patient posture using a visual and/or audible interaction device during execution of an X-ray imaging procedure such as mammography, and provides the patient with information about the procedure during the procedure's execution, thereby improving the patient experience while reducing the workload of an operator. The X-ray imaging apparatus may include an X-ray tube, an X-ray detector, and an arm including an upper end within which the X-ray tube is disposed, and a lower end within which the X-ray detector is disposed. An illumination unit may be configured to provide an indication of a movement direction of the arm, responsive to a user input for moving the arm in the movement direction. A controller may control the illumination unit.

Abstract: Two types of activated charcoals having different adsorption and desorption functions are appropriately disposed in a canister. Gas movement is evenly dispersed via an air space and diffuser equipped between the two activated charcoals. Thereby, leakage of fuel vapor from the canister to the atmosphere is minimized without implementing a supplementary component (e.g., a subsidiary canister), and reduction of the consumption amount of the activated charcoal by eliminating a dead volume.

Abstract: A method for forming a charge storage node is disclosed. The method for forming a charge storage node prevents the bridge between cells and maximize the hole size of a cell forming portion to thus improve the properties of a device and increase product yield by depositing an oxide film having a predetermined thickness and forming a contact hole in order to fill the hole of a notch type generated by the etching difference between a damaged sacrificial oxide film and an oxide film for capacitor formation deposited thereon after enlarging the hole size by washing and dipping processes before the formation of the charge storage node.

Abstract: A method for forming a charge storage node is disclosed. The method for forming a charge storage node prevents the bridge between cells and maximize the hole size of a cell forming portion to thus improve the properties of a device and increase product yield by depositing an oxide film having a predetermined thickness and forming a contact hole in order to fill the hole of a notch type generated by the etching difference between a damaged sacrificial oxide film and an oxide film for capacitor formation deposited thereon after enlarging the hole size by washing and dipping processes before the formation of the charge storage node.

Abstract: Disclosed is a method for forming a capacitor of a semiconductor device. When the lower electrodes of the capacitor are formed, the growth of hemispherical grains is suppressed at the uppermost part and the outer part of the lower electrodes, so as to prevent the generation of a bridge between the lower electrodes of the capacitor thereby increasing product yield, capacitance and reliability.

Abstract: The present invention discloses a method for planarizing a semiconductor device used in an integrated circuit. According to the method, a semiconductor substrate on which a patterned layer having topology is formed, is loaded into a reactor chamber. Afterwards, an interlevel insulating layer is formed on the semiconductor substrate. Thereafter, a layer for the planarization containing a dopant is formed on the interlevel insulating layer. The dopant contained in the layer for the planarization, is diffused outwards from the surface of the layer. The dopant diffused outwards from the layer for the planarization is pumped out to the outside of the reactor chamber without introducing an inert gas to the reactor chamber. Finally, the layer for the planarization is flowed.

Abstract: A structure is provided by a welding method of connecting a connection terminal piece to lead wires extending from a deflection yoke coil for deflecting electron beams. The lead wires are led out from a winding body and consist of one or more conductive cores each of which has a coating layer of a self fusing layer and a high thermal-resistance insulation layer therearound. The welding method includes the steps of burning and eliminating said self fusing layer and said high thermal-resistance insulation layer of said lead wires from said conductive cores by heating through a burning method, and fusing and solidifying a filler metal wherein said filler metal is disposed between said connection terminal piece and said lead wires and has conductive and adhesive properties. The burnt materials of said self fusing layer and said high thermal-resistance insulation layer are extracted out of said lead wires during said burning and eliminating step.

Abstract: Disclosed is a method for the isolation between active regions of a semiconductor device. The method provides an poly buffered local oxidation of silicon(PBLOCOS) technology. In this method, a non-doped polysilicon layer and the overlying amorphous silicon layer are used as a buffer layer. To form a field oxide region for isolation between semiconductor devices, first a pad oxide film, the buffer layer, silicon nitride layer are formed on a semiconductor substrate. Thereafter, patterning is performed to expose the pad oxide film at a selected region. Lastly, thermal oxidation is performed, thereby the exposed pad oxide is grown to form the field oxide.