Patents by Inventor Euisong Kim

Euisong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of preventing residue on an insulator layer in the fabrication of a semiconductor device
    Patent number: 4990467
    Abstract: A method for fabrication of semiconductor device in which a tungsten film only exists on contact hole which is comprising the steps of depositing a insulator layer on the silicon substrate being doped by impurity, depositing a photoresist high temperature resistant resin on the insulator layer in order to form a contact hole, forming a contact hole by etching the insulator layer using the photoresist resin as a mask, selectively depositing tungsten film on the contact hole and removing the photoresist layer, and a method for fabrication of semiconductor device which is comprising the steps of depositing the first photoresist resin layer followed by depositing the second photoresist resin layer on the insulator layer forming a pattern to the first and the second photoresist resin layer, forming a contact hole by etching the insulator layer, selectively depositing tungsten film on the contact hole after removing the second photoresist resin layer and removing the first photoresist resin layer.
    Type: Grant
    Filed: July 12, 1989
    Date of Patent: February 5, 1991
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chuljin Lee, Euisong Kim