Abstract: An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Abstract: Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs.

Abstract: Provided is a white organic light emitting device comprising an anode, a cathode, and an organic layer formed between the anode and the cathode, wherein the organic layer comprises one green emissive layer, one blue emissive layer, one red emissive layer, and one charge generating layer formed between any two of the foregoing green, blue and red emissive layers. The white organic light emitting device has a tandem structure providing the simplest structure for the three color light emissions of green, blue and red.

Abstract: An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Abstract: Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.

Abstract: A pixel structure and an organic light emitting device including the pixel structure has at least one electronic material layer arranged between a lower electrode and an upper electrode. The pixel structure includes the lower electrode arranged in a desired pattern on a substrate and a bank covering the substrate on which the lower electrode is arranged, and defining an opening portion to expose at least a portion of the lower electrode. The area of the opening portion is greater than that of the exposed portion of the lower electrode. The pixel structure further includes an electronic material layer arranged in the opening portion and covering an upper surface of the lower electrode, and the upper electrode arranged on the electronic material layer.

Abstract: Provided is an organic light-emitting device exhibiting lower driving voltages and improved lifetime characteristics and emission efficiency. The organic light-emitting device includes a cathode; an anode; and a light-emitting layer interposed between the cathode and the anode, wherein a buffer layer is disposed on at least one surface of the light-emitting layer.

Abstract: An organic electroluminescent device includes: a substrate; a plurality of first electrodes arranged on the substrate; a plurality of banks arranged on the substrate and the first electrodes to define pixels on the first electrodes, the plurality of banks being of an inorganic material; a plurality of separators arranged in stripe shapes on the plurality of banks between the pixels, the plurality of separators being of an organic material; organic Emitting Material Layers (organic EMLs), each having a predetermined color, the organic EMLs being arranged within each of the pixels; and a plurality of second electrodes arranged on the organic EMLs, the plurality of banks, and the plurality of separators.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs.

Abstract: An organic light emitting device (OLED) and a white light emitting device are provided. The OLED includes a substrate, a mesh shaped anode formed on the substrate and designed to pass light, a cathode facing the anode, and an organic light emitting layer located between the anode and the cathode.

Abstract: Disclosed herein is a method for forming a highly conductive metal pattern which comprises forming a metal pattern on a substrate by the use of a photocatalyst and a selective electroless or electroplating process, and transferring the metal pattern to a flexible plastic substrate. According to the method, a highly conductive metal pattern can be effectively formed on a flexible plastic substrate within a short time, compared to conventional formation methods. Further disclosed is an EMI filter comprising a metal pattern formed by the method. The EMI filter not only exhibits high performances, but also is advantageous in terms of low manufacturing costs and simple manufacturing process. Accordingly, the EMI filter can be applied to a variety of flat panel display devices, including PDPs and organic ELs.

Abstract: A method for forming a metal pattern with a low resistivity. The method may include the steps of: (i) coating a photocatalytic compound onto a substrate to form a photocatalytic film layer; (ii) coating a water-soluble polymeric compound onto the photocatalytic film layer to form a water-soluble polymer layer; (iii) selectively exposing the two layers to light to form a latent pattern acting as a nucleus for crystal growth; and (iv) plating the latent pattern with a metal to grow metal crystals thereon. According to the method, a multilayer wiring pattern including a low resistivity metal may be formed in a relatively simple manner at low cost, and the metals constituting the respective layers can be freely selected according to the intended application. The low resistivity metal pattern may be advantageously applied to flat panel display devices, e.g., LCDs, PDPs and ELDs.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.

Abstract: Provided herein is a white organic light-emitting device comprising a color control layer. The white organic light-emitting device comprises at least one white organic light emitting unit interposed between an anode and a cathode, and a color control layer interposed between the cathode and the at least one white organic light emitting unit, the color control layer having an electron transport capability and a light interference effect.

Abstract: Provided is a white organic light emitting device comprising an anode, a cathode, and an organic layer formed between the anode and the cathode, wherein the organic layer comprises one green emissive layer, one blue emissive layer, one red emissive layer, and one charge generating layer formed between any two of the foregoing green, blue and red emissive layers.