Patents by Inventor Eun-ae Chang

Eun-ae Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of manufacturing semiconductor devices including transistors
    Patent number: 8785267
    Abstract: A method of manufacturing a semiconductor device includes forming a gate insulation layer pattern on a substrate, forming a sacrificial layer including impurities on the gate insulation layer pattern, annealing the sacrificial layer so that the impurities in the sacrificial layer diffuse into the gate insulation layer pattern, removing the sacrificial layer, and forming a gate electrode on the gate insulation layer pattern.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: July 22, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-kweon Baek, Jin-soak Kim, Gab-jin Nam, Ji-young Min, Eun-ae Chang
  • Methods of Manufacturing Semiconductor Devices Including Transistors
    Publication number: 20130157428
    Abstract: A method of manufacturing a semiconductor device includes forming a gate insulation layer pattern on a substrate, forming a sacrificial layer including impurities on the gate insulation layer pattern, annealing the sacrificial layer so that the impurities in the sacrificial layer diffuse into the gate insulation layer pattern, removing the sacrificial layer, and forming a gate electrode on the gate insulation layer pattern.
    Type: Application
    Filed: September 13, 2012
    Publication date: June 20, 2013
    Inventors: Sung-kweon Baek, Jin-soak Kim, Gab-jin Nam, Ji-young Min, Eun-ae Chang