Patents by Inventor Eun Ah Heo

Eun Ah Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11520206
    Abstract: An active metamaterial array of the present disclosure includes: a substrate; a plurality of metamaterial structures disposed on the substrate and spaced apart from each other; a conductivity variable material layer formed between each of the plurality of the metamaterial structures so as to selectively connect the metamaterial structures; an electrolyte material layer formed on the metamaterial structures and the conductivity variable material layer; and a gate electrode disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, and when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: December 6, 2022
    Assignee: FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION
    Inventors: Ho Jin Lee, Moon Sung Kang, Hyun Seung Jung, Eun Ah Heo, Bo Eun Cho, Jae Mok Koo
  • Publication number: 20200301224
    Abstract: An active metamaterial array of the present disclosure includes: a substrate; a plurality of metamaterial structures disposed on the substrate and spaced apart from each other; a conductivity variable material layer formed between each of the plurality of the metamaterial structures so as to selectively connect the metamaterial structures; an electrolyte material layer formed on the metamaterial structures and the conductivity variable material layer; and a gate electrode disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, and when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer.
    Type: Application
    Filed: February 22, 2017
    Publication date: September 24, 2020
    Inventors: Ho Jin Lee, Moon Sung Kang, Hyun Seung Jung, Eun Ah Heo, Bo Eun Cho, Jae Mok Koo
  • Publication number: 20170083095
    Abstract: A sensor integrated haptic device, a method for manufacturing the sensor integrated haptic device and an electronic device including the sensor integrated haptic device are provided. To elaborate, the sensor integrated haptic device includes a sensor and an actuator formed to be arranged on the same plane as the sensor, and each of the sensor and the actuator includes a lower electrode formed through a first process, an ionic elastomer layer formed on the lower electrode through a second process, and an upper electrode formed on the ionic elastomer layer through a third process.
    Type: Application
    Filed: May 4, 2016
    Publication date: March 23, 2017
    Inventors: Hojin Lee, Do Hwan Kim, Eun Ah Heo, Sang Sik Park