Abstract: Provided is a digital surface-enhanced Raman scattering (SERS) sensing platform which allows quantitative detection of a substance to be detected reliably and reproducibly with an excellent limit of detection in a large dynamic range, including: a surface-enhanced Raman scattering (SERS) active reagent which includes Raman active particles including a spherical plasmonic metal core, a plasmonic metal shell having a surface unevenness, and a self-assembled monolayer including a Raman reporter positioned between the core and the shell; a Raman spectroscopic detection unit which performs Raman mapping based on a Raman spectrum which is detected by irradiating the active reagent with an excitation light; and a digital signal analysis unit which analyzes a quantitative detection signal of a substance to be detected by a combination of a Raman signal intensity calculated from the Raman spectrum and a digital count calculated from the Raman mapping.

Abstract: The present disclosure relates to a surface-enhanced Raman spectroscopy complex probe capable of effectively detecting a catecholamine compound even at extremely low concentrations. The complex probe includes a nanolaminate including a nanogap and metal nanoparticles. In this case, the nanolaminate and the metal nanoparticles are modified to a compound that may be bound to each functional group included in catecholamine, and thus, catecholamine included in an analyte is doubly recognized by the complex probe. In addition, since a hotspot emitting a strong SERS signal is formed by a nanogap included in a nanolaminate, it is possible to effectively detect a catecholamine compound even at extremely low concentrations.

Abstract: Provided is a Raman-active particle which is a Raman-active particle for surface-enhanced Raman analysis, the particle including: a spherical plasmonic metal core; a plasmonic metal shell having surface unevenness; and a self-assembled monolayer which is bonded to each of the core and the shell and positioned between the core and the shell, and includes a Raman reporter.

Abstract: Provided are a detection method and a detection device of a substance using surface-enhanced Raman scattering according to the present invention, the detection method according to the present invention including: bringing Raman-active particles into contact with a sample which may contain a substance to be detected, the Raman-active particle including a spherical plasmonic metal core, a plasmonic metal shell having surface unevenness, a self-assembled monolayer which is bonded to each of the core and the shell and positioned between the core and the shell, and includes a Raman reporter, and a first receptor which is positioned on a surface of the plasmonic metal shell and may be specifically bonded to the substance to be detected; and irradiating excitation light thereon to detect the substance to be detected in the sample.

Abstract: Provided is a Raman-active nanoparticle including: a spherical plasmonic metal core; a plasmonic metal shell having surface irregularities; and a self-assembled monolayer which binds to each of the core and the shell, is positioned between the core and the shell, and includes a Raman reporter satisfying the following Chemical Formula 1: NO2—Ar—SH??(Chemical Formula 1) wherein Ar is a (C6-C12) arylene group.

Abstract: Provided is a method of preparing composite nanoparticles, which includes: a) preparing a metal nanocore having a nano-star shape from a first reaction solution in which a first metal precursor is mixed with a first buffer solution; b) fixing a Raman reporter in the metal nanocore; and c) forming a metal shell, which surrounds the nanocore in which the Raman reporter is fixed, from a second reaction solution in which the nanocore in which the Raman reporter is fixed, and a second metal precursor are mixed with a second buffer solution.

Abstract: Provided is a method of preparing Raman-active nanoparticles, which includes a) preparing a metal nanocore having a nano-star shape from a first reaction solution in which a first metal precursor is mixed with a buffer solution; b) fixing a Raman reporter in the metal nanocore; and c) forming a metal shell, which surrounds the nanocore in which the Raman reporter is fixed, from a second reaction solution in which a second metal precursor is mixed with the nanocore in which the Raman reporter is fixed. The Raman reporter has a binding affinity for each of a first metal of the metal nanocore and a second metal of the metal shell.

Abstract: Provided is a method of preparing composite nanoparticles, which includes: a) preparing a metal nanocore having a nano-star shape from a first reaction solution in which a first metal precursor is mixed with a first buffer solution; b) fixing a Raman reporter in the metal nanocore; and c) forming a metal shell, which surrounds the nanocore in which the Raman reporter is fixed, from a second reaction solution in which the nanocore in which the Raman reporter is fixed, and a second metal precursor are mixed with a second buffer solution.

Abstract: Provided is a method for manufacturing a transparent substrate according to an exemplary embodiment of the present invention including: a) forming a photoresist layer satisfying D=m*(?/2n); b) manufacturing a ring-shaped pattern by exposing the photoresist layer and developing the exposed photoresist layer, using a photo mask including a transparent base and a plate-type metal dot formed contacting a light emitting surface of the transparent base; c) manufacturing a second mold to which the ring-shaped pattern is reversely transferred by using a substrate on which the ring-shaped pattern is formed as a first mold; and d) manufacturing the transparent substrate in which a ring-shaped transparent protrusion is integrally formed with the transparent base by filling a liquefied transparent resin in the second mold and curing the transparent resin and removing the second mold to transfer the ring-shaped pattern.

Abstract: Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(?/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, ? is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.

Abstract: Provided is a method for manufacturing a transparent substrate according to an exemplary embodiment of the present invention including: a) forming a photoresist layer satisfying D=m*(?/2n); b) manufacturing a ring-shaped pattern by exposing the photoresist layer and developing the exposed photoresist layer, using a photo mask including a transparent base and a plate-type metal dot formed contacting a light emitting surface of the transparent base; c) manufacturing a second mold to which the ring-shaped pattern is reversely transferred by using a substrate on which the ring-shaped pattern is formed as a first mold; and d) manufacturing the transparent substrate in which a ring-shaped transparent protrusion is integrally formed with the transparent base by filling a liquefied transparent resin in the second mold and curing the transparent resin and removing the second mold to transfer the ring-shaped pattern.

Abstract: Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(?/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, ? is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.

Abstract: An apparatus for dipping a substrate includes: a body having an internal plate formed therein, and including a backing plate provided over the internal plate; a crucible accommodating an aqueous solution therein and provided over the backing plate; a crucible driving unit provided in the body and connected to the crucible to move the crucible in a horizontal direction or a vertical direction of the body; a support having a lower end to which a substrate is fixed; a support driving unit provided to an upper side of the body and connected to the support to drive the support in a length direction of the support or rotate the support in the vertical direction of the body; and a controlling unit connected to the crucible driving unit and the support driving unit to control driving of the crucible driving unit and the support driving unit.

Abstract: An apparatus for dipping a substrate includes: a body having an internal plate formed therein, and including a backing plate 120 provided over the internal plate; a crucible accommodating an aqueous solution therein and provided over the backing plate; a crucible driving unit provided in the body and connected to the crucible so as to move the crucible in a horizontal direction or a vertical direction of the body; a support having a lower end to which a substrate is fixed; a support driving unit provided to an upper side of the body and connected to the support so as to drive the support in a length direction of the support or rotate the support in the vertical direction of the body; and a controlling unit connected to the crucible driving unit and the support driving unit to control driving of the crucible driving unit and the support driving unit.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSea-xInyMz where, in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSen?xInyMz where in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.