Patents by Inventor Eun Bin KO

Eun Bin KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10615311
    Abstract: An embodiment discloses a light emitting device and a display comprising the same.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: April 7, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Duk Hyun Park, Eun Bin Ko, Sung Wook Moon, Sang Rock Park, Young Kuen Jung, Ki Yong Hong, Byung Hak Jeong
  • Patent number: 10381510
    Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: August 13, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Eun Bin Ko, Yong Jun Kim, Ki Yong Hong, Byung Hak Jeong
  • Publication number: 20190148601
    Abstract: An embodiment discloses a light emitting device and a display comprising the same.
    Type: Application
    Filed: April 21, 2017
    Publication date: May 16, 2019
    Inventors: Duk Hyun PARK, Eun Bin KO, Sung Wook MOON, Sang Rock PARK, Young Kuen JUNG, Ki Yong HONG, Byung Hak JEONG
  • Patent number: 10090439
    Abstract: Disclosed are a light emitting device, a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer comprising a barrier layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and which has an un-doped area and a doped area with dopants.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: October 2, 2018
    Assignee: LG Innotek Co., Ltd.
    Inventor: Eun Bin Ko
  • Patent number: 10043947
    Abstract: A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a protective layer disposed above the light emitting structure and including a through region; a first electrode disposed in the through region and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode, and having a first region disposed on the first electrode and a second region disposed on the protective layer; and a second electrode electrically connected to the second conductive semiconductor layer.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: August 7, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Eun Bin Ko, Bum Doo Park, Sang Jun Lee
  • Publication number: 20170155017
    Abstract: A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a protective layer disposed above the light emitting structure and including a through region; a first electrode disposed in the through region and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode, and having a first region disposed on the first electrode and a second region disposed on the protective layer; and a second electrode electrically connected to the second conductive semiconductor layer.
    Type: Application
    Filed: April 29, 2015
    Publication date: June 1, 2017
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Eun Bin KO, Bum Doo PARK, Sang Jun LEE
  • Publication number: 20170012171
    Abstract: Disclosed are a light emitting device, a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer comprising a barrier layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and which has an un-doped area and a doped area with dopants.
    Type: Application
    Filed: September 2, 2014
    Publication date: January 12, 2017
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Eun Bin KO
  • Publication number: 20160284934
    Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.
    Type: Application
    Filed: March 25, 2016
    Publication date: September 29, 2016
    Inventors: Eun Bin KO, Yong Jun KIM, Ki Yong HONG, Byung Hak JEONG